PDF HYM64V2005GU-60 Data sheet ( Hoja de datos )

Número de pieza	HYM64V2005GU-60
Descripción	3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Fabricantes	Siemens
Logotipo
Hay una vista previa y un enlace de descarga de HYM64V2005GU-60 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas
No Preview Available ! 3.3V 2M × 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 168pin unbuffered DIMM Module with serial presence detect HYM64V2005GU-50/-60 HYM72V2005GU-50/-60 • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module for PC main memory applications • 1 bank 2M x 64, 2M x 72 organisation • Optimized for byte-write non-parity or ECC applications • Extended Data Out (EDO) • Performance: tRAC tCAC tAA tRC tHPC RAS Access Time CAS Access Time Access Time from Address Cycle Time EDO Mode Cycle Time -50 50 ns 13 ns 25 ns 84 ns 20 ns -60 60 ns 15 ns 30 ns 104 ns 25 ns • Single +3.3 V ± 0.3 V Power Supply • CAS-before-RAS refresh, RAS-only-refresh • Decoupling capacitors mounted on substrate • All inputs, outputs and clocks are fully LV-TTL compatible • Serial presence detects (optional) • Utilizes 2M × 8 -DRAMs in SOJ packages • 2048 refresh cycles / 32 ms with 11 / 10 addressing (Row / Column) • Gold contact pad • Card Size: 133,35mm x 25,40 mm x 5,30 mm • This DRAM product module family is intended to be fully pin and architecture compatible with the 168pin unbuffered SDRAM DIMM module family Semiconductor Group 1 2.97 1 page HYM 64(72)V2005GU-50/-60 2M x 64/72 DRAM Module RAS0 WE0 OE0 CAS0 DQ0-DQ7 CAS1 DQ8-DQ15 CB0-CB7 CAS2 DQ16-DQ23 CAS3 DQ24-DQ31 I/O1-I/O8 D0 I/O1-I/O8 D1 I/O1-I/O8 D8 I/O1-I/O8 D2 I/O1-I/O8 D3 RAS2 WE2 OE2 CAS4 DQ32-DQ39 CAS5 DQ40-DQ47 CAS6 DQ48-DQ55 CAS7 DQ56-DQ63 I/O1-I/O8 D4 I/O1-I/O8 D5 I/O1-I/O8 D6 I/O1-I/O8 D7 A0-A10 VCC VSS D0-D8 C0-C8 E2PROM (256wordx8bit) SA0 SA1 SA2 SCL SDA 2M x 72 DIMM Module Block Diagram Semiconductor Group 5 5 Page HYM 64(72)V2005GU-50/-60 2M x 64/72 DRAM Module AC Characteristics (contd’ ) 5)6) TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, tT = 2 ns Parameter Symbol Limit Values -50 -60 min. max. min. max. Hyper Page Mode (EDO) Read-modify-Write Cycle Hyper page mode (EDO) read-write cycle time tPRWC 58 – 68 – CAS precharge to WE tCPWD 41 – 49 – Unit ns ns 16E Note CAS-before-RAS Refresh Cycle CAS setup time CAS hold time RAS to CAS precharge time Write to RAS precharge time Write hold time referenced to RAS tCSR tCHR tRPC tWRP tWRH 10 10 5 10 10 – – – – – 10 – 10 – 5– 10 – 10 – ns ns ns ns ns Capacitance TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V; f = 1 MHz Parameter Input Capacitance (A0 to A9) Input Capacitance (RAS0, RAS2) Input Capacitance (CAS0-CAS7) Input Capacitance (WE0,WE2,OE0,OE2) I/O Capacitance (DQ0-DQ63,CB0-CB8) Input Capacitance (SCL, SA0-2) Input/Output Capacitance (SDA) Symbol CI1 CI2 CI3 CI4 CIO1 Cs Cs Limit Values min. max. – 55 – 50 – 10 – 50 – 11 –8 – 10 Unit pF pF pF pF pF pF pF Semiconductor Group 11 11 Page

Páginas	Total 14 Páginas
PDF Descargar	[ Datasheet HYM64V2005GU-60.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
HYM64V2005GU-60	3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module	Siemens

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar