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PDF HYM641010GS-70 Data sheet ( Hoja de datos )
| Número de pieza | HYM641010GS-70 | |
| Descripción | 1M x 64-Bit Dynamic RAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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1M × 64-Bit Dynamic RAM Module
HYM 641010GS-60/-70
HYM 641020GS-60/-70
Advanced Information
• 1 048 576 words by 64-bit organization
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 9680 mW active (-60 version)
max. 8800 mW active (-70 version)
CMOS – 451 mW standby
TTL – 550 mW standby
• CAS-before-RAS refresh, RAS-only-refresh
• Byte Write Capability
• 16 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs except RAS and DQ
• 168 pin, dual read-out, Single in-Line Memory Module
• Utilizes sixteen 1M × 4 -DRAMs (HYB 514400BJ/BT) and
four BiCMOS 8-bit buffers/line drivers 74ABT244
• Two version : HYM 641010GS with SOJ-components (8.89 mm module thickness)
HYM 641020GS with TSOPII-components (4.06 mm module thickness)
• 1024 refresh cycles / 16 ms
• Optimized for use in byte-write non-parity applications
• Gold contact pads,double sided module with 25.35 mm (1000 mil) height
Semiconductor Group
1
12.95
1 page  
HYM 641010/20GS-60/-70
1M x 64 Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................ 12,32 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics 1)
TA = 0 to 70 °C; VCC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
IO(L)
Average VCC supply current:
ICC1
HYM 641010/20GS-60
HYM 641010/20GS-70
Limit Values
min.
max.
2.4 5.5
– 1.0
0.8
2.4 –
– 0.4
– 10 10
– 10 10
– 1760
– 1600
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current
(RAS = CAS = VIH)
ICC2
Average VCC supply current during RAS
only refresh cycles:
ICC3
HYM 641010/20GS-60
HYM 641010/20GS-70
–
–
–
50
1760
1600
(RAS cycling, CAS = VIH , tRC = tRC min.)
Unit Test
Condition
V–
V–
V–
V–
µA –
µA –
mA 2), 3)
mA
mA –
2)
mA
mA
Semiconductor Group
5
5 Page 
L-DIM-168-1
Module package
(dual read-out, single in-line memory module)
HYM 641010/20GS-60/-70
1M x 64 Module
GLD05860
Semiconductor Group
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HYM641010GS-70.PDF ] | |
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