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PDF HYM368020GS-60 Data sheet ( Hoja de datos )

Número de pieza HYM368020GS-60
Descripción 8M x 36-Bit Dynamic RAM Module
Fabricantes Siemens 
Logotipo Siemens Logotipo



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No Preview Available ! HYM368020GS-60 Hoja de datos, Descripción, Manual

8M x 36-Bit Dynamic RAM Module
HYM 368020S/GS-60
SIMM modules with 8 388 608 words by 36-bit organization
for PC main memory applications
Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
Fast page mode capability
40 ns cycle time (-60 version)
Single + 5 V (± 10 %) supply
Low power dissipation
max. 7260 mW active (-60 version)
max. 6600 mW active (-70 version)
CMOS – 132 mW standby
TTL –264 mW standby
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
24 decoupling capacitors mounted on substrate
All inputs, outputs and clocks fully TTL compatible
72 pin Single in-Line Memory Module (L-SIM-72-14) with 31.75 mm height
Utilizes sixteen 4Mx4-DRAMs and eight 4M x 1 DRAMs in 300 mil wide SOJ packages
2048 refresh cycles / 32 ms
Optimized for use in byte-write parity applications
Tin-Lead contact pads (S- version)
Gold contact pads (GS - version)
Semiconductor Group
1
12.95

1 page




HYM368020GS-60 pdf
HYM 368020S/GS-60
8M × 36-Bit
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range......................................................................................... – 55 to 125 °C
Input/output voltage ............................................................................ –0.5V to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 9.24 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VCC = 5 V ± 10 %
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
Average VCC supply current
(RAS, CAS, address cycling, tRC = tRC min)
-60 version
Symbol
VIH
VIL
VOH
VOL
II(L)
IO(L)
ICC1
Limit Values
min.
max.
2.4 Vcc+0.5
– 0.5
0.8
2.4 –
– 0.4
– 20 20
– 20 20
– 1320
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
µA 1)
µA 1)
mA
2),3),4)
Standby VCC supply current
(RAS = CAS = VIH)
Average VCC supply current
during RAS only refresh cycles
(RAS cycling, CAS = VIH, tRC = tRC min)
-60 version
ICC2
ICC3
48 mA
1320
mA 2),4)
Semiconductor Group
5

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