DataSheetWiki


HYM364035GS-60 fiches techniques PDF

Siemens - 4M x 36-Bit EDO-DRAM Module

Numéro de référence HYM364035GS-60
Description 4M x 36-Bit EDO-DRAM Module
Fabricant Siemens 
Logo Siemens 





1 Page

No Preview Available !





HYM364035GS-60 fiche technique
4M × 36-Bit EDO-DRAM Module
HYM 364035S/GS-60
Advanced Information
4 194 304 words by 36-Bit organization
Fast access and cycle time
60 ns RAS access time
15 ns CAS access time
104 ns cycle time
Hyper page mode (EDO) capability
25 ns cycle time
Single + 5 V (± 10 %) supply
Low power dissipation
max. 7260 mW active
CMOS – 66 mW standby
TTL – 132 mW standby
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
12 decoupling capacitors mounted on substrate
All inputs, outputs and clocks fully TTL compatible
72 pin Single in-Line Memory Module (L-SIM-72) with 22.9 mm (900 mil) height
Utilizes 12 4M x 3 DRAM’s in 300 mil SOJ packages
2048 refresh cycles / 32 ms
Optimized for use in byte-write parity applications
Tin-Lead contact pads (HYM 364035S-60)
Gold contact pads (HYM 364035GS-60)
Semiconductor Group
1
4.96

PagesPages 10
Télécharger [ HYM364035GS-60 ]


Fiche technique recommandé

No Description détaillée Fabricant
HYM364035GS-60 4M x 36-Bit EDO-DRAM Module Siemens
Siemens

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche