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PDF HYM364025S Data sheet ( Hoja de datos )
| Número de pieza | HYM364025S | |
| Descripción | 4M x 36-Bit EDO - DRAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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4M x 36-Bit EDO - DRAM Module
HYM364025S/GS-50/-60
• SIMM modules with 4 194 304 words by 36-Bit organization
for PC main memory applications
• Fast access and cycle time
50 ns access time
84 ns cycle time (-50 version)
60 ns access time
104 ns cycle time (-60 version)
• Hyper Page Mode (EDO) capability
20 ns cycle time (-50 version)
25 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 6820 mW active (-50 version)
max. 6160 mW active (-60 version)
CMOS – 66 mW standby
TTL –132 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clocks fully TTL compatible
• 72 pin Single in-Line Memory Module (L-SIM-72-12) with 22.9 mm (900 mil) height
• Utilizes eight 4Mx4-EDO-DRAMs and four 4Mx1-EDO-DRAMs in SOJ packages
• 2048 refresh cycles / 32 ms
• Optimized for use in byte-write parity applications
• Tin-Lead contact pads (S-version)
• Gold contact pads (GS - version)
Semiconductor Group
1
4.97
1 page  
HYM 364025S/GS-50/-60
4M × 36-Bit EDO-Module
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range......................................................................................... – 55 to 125 °C
Input/output voltage ............................................................................ –0.5V to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation..................................................................................................................... 8.7 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VCC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
IO(L)
Average VCC supply current
ICC1
(RAS, CAS, address cycling, tRC = tRC min)
50 ns - Version
60 ns - Version
Limit Values
min.
max.
2.4 Vcc+0.5
– 0.5
0.8
2.4 –
– 0.4
– 20 20
Unit
V
V
V
V
µA
Test
Condition
1)
1)
1)
1)
1)
– 10
10 µA 1)
–
1240
mA 2) 3) 4)
– 1120 mA
Standby VCC supply current
(RAS = CAS = VIH)
Average VCC supply current
during RAS only refresh cycles
(RAS cycling, CAS = VIH, tRC = tRC min)
50 ns - Version
60 ns - Version
ICC2
ICC3
– 16 mA
– 1240 mA 2) 4)
– 1120 mA
Semiconductor Group
5
5 Page | ||
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| PDF Descargar | [ Datasheet HYM364025S.PDF ] | |
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| HYM364025S | 4M x 36-Bit EDO - DRAM Module | Siemens |
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