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Número de pieza | HYM364020S | |
Descripción | 4M x 36-Bit Dynamic RAM Module | |
Fabricantes | Siemens | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HYM364020S (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! 4M x 36-Bit Dynamic RAM Module
HYM 364020S/GS-60
• SIMM modules with 4 194 304 words by 36-Bit organization
for PC main memory applications
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability
40 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 7260 mW active (-60 version)
CMOS – 66 mW standby
TTL –132 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 12 decoupling capacitors mounted on substrate
• All inputs, outputs and clocks fully TTL compatible
• 72 pin Single in-Line Memory Module (L-SIM-72-12) with 22.9 mm (900 mil) height
• Utilizes eight 4Mx4-DRAMs and four 4Mx1-DRAMs in SOJ packages
• 2048 refresh cycles / 32 ms
• Optimized for use in byte-write parity applications
• Tin-Lead contact pads (S-version)
• Gold contact pads (GS - version)
Semiconductor Group
1
6.95
1 page HYM 364020S/GS-60
4M × 36-Bit
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range......................................................................................... – 55 to 125 °C
Input/output voltage ............................................................................ –0.5V to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation..................................................................................................................... 9.3 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VCC = 5 V ± 10 %
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
Average VCC supply current
(RAS, CAS, address cycling, tRC = tRC min)
-60 version
Symbol
VIH
VIL
VOH
VOL
II(L)
IO(L)
ICC1
Limit Values
min.
max.
2.4 Vcc+0.5
– 0.5
0.8
2.4 –
– 0.4
– 20 20
– 10 10
– 1320
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
µA 1)
µA 1)
mA 2),3),4)
Standby VCC supply current
(RAS = CAS = VIH)
Average VCC supply current
during RAS only refresh cycles
(RAS cycling, CAS = VIH, tRC = tRC min)
-60 version
ICC2
ICC3
–
–
24 mA
1320
mA 2),4)
Semiconductor Group
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet HYM364020S.PDF ] |
Número de pieza | Descripción | Fabricantes |
HYM364020GS-60 | 4M x 36-Bit Dynamic RAM Module | Siemens |
HYM364020S | 4M x 36-Bit Dynamic RAM Module | Siemens |
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