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PDF HYM362140GS-60 Data sheet ( Hoja de datos )
| Número de pieza | HYM362140GS-60 | |
| Descripción | 2M x 36-Bit Dynamic RAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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2M x 36-Bit Dynamic RAM Module
HYM 362140S/GS-60/-70
Advanced Information
• 2 097 152 words by 36-bit organization
(alternative 4 194 304 words by 18-bit)
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 6952 mW active (-60 version)
max. 6292 mW active (-70 version)
CMOS – 132 mW standby
TTL – 264 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 12 decoupling capacitors mounted on
substrate
• All inputs, outputs and clocks fully TTL
compatible
• 72 pin Single in-Line Memory Module with
31.75 mm height
• Utilizes eight 1M × 1-DRAMs and sixteen
1M × 4 DRAMs in 300 mil SOJ-packages
• 1024 refresh cycles / 16 ms
• Tin-Lead contact pads (S - version)
• God contact pads (GS - version)
Ordering Information
Type
HYM 362140S-60
Ordering Code
Q67100-Q955
Package
L-SIM-72-8
HYM 362140S-70
Q67100-Q954 L-SIM-72-8
HYM 362140GS-60
Q67100-Q957 L-SIM-72-8
HYM 362140GS-70
Q67100-Q956 L-SIM-72-8
Description
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
Semiconductor Group
601
05.94
1 page  
HYM 362140S/GS-60/-70
2M x 36-Bit
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 ˚C
Storage temperature range......................................................................................... – 55 to 125 ˚C
Soldering temperature ............................................................................................................ 260 ˚C
Soldering time ............................................................................................................................. 10 s
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation..................................................................................................................... 8.9 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics1)
TA = 0 to 70 ˚C, VCC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
IO(L)
Average VCC supply current
ICC1
(RAS, CAS, address cycling, tRC = tRC min)
-60 version
-70 version
Limit Values
min.
max.
2.4 5.5
– 1.0
0.8
2.4 –
– 0.4
– 20 20
– 20 20
– 1264
– 1144
Standby VCC supply current
(RAS = CAS = VIH)
ICC2
Average VCC supply current
ICC3
during RAS only refresh cycles
(RAS cycling, CAS = VIH, tRC = tRC min)
-60 version
-70 version
–
–
–
48
1264
1144
Unit Test
Condition
V
V
V
V
µA
µA
mA 2)
mA 3)
mA
mA 2)
mA
Semiconductor Group
605
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HYM362140GS-60.PDF ] | |
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