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PDF HYM328025GS-60 Data sheet ( Hoja de datos )
| Número de pieza | HYM328025GS-60 | |
| Descripción | 8M x 32-Bit EDO-DRAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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8M × 32-Bit EDO-DRAM Module
HYM328025S/GS-50/-60
• SIMM modules with 8 388 608 words by 32-bit organization
for PC main memory applications
• Fast access and cycle time
50 ns access time
84 ns cycle time (-50 version)
60 ns access time
104 ns cycle time (-60 version)
• Hyper page mode (EDO) capability
20 ns cycle time (-50 version)
25 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 5280 mW active (-50 version)
max. 4840 mW active (-60 version)
CMOS – 88 mW standby
TTL –176 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 16 decoupling capacitors mounted on substrate
• All inputs, outputs and clocks fully TTL compatible
• 72 pin Single in-Line Memory Module (L-SIM-72-15) with 25.40 mm height
• Utilizes sixteen 4Mx4-DRAMs in SOJ packages
• 2048 refresh cycles / 32 ms
• Optimized for use in byte-write non-parity applications
• Tin-Lead contact pads (S- version)
• Gold contact pads (GS -version)
Semiconductor Group
1
9.96
1 page  
HYM328025S/GS-50/-60
8M × 32-Bit EDO-Module
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range......................................................................................... – 55 to 125 °C
Input/output voltage ............................................................................ –0.5V to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 6.72 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VCC = 5 V ± 10 %
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
Average VCC supply current
(RAS, CAS, address cycling, tRC = tRC min)
-50 version
-60 version
Symbol
VIH
VIL
VOH
VOL
II(L)
IO(L)
ICC1
Limit Values
min.
max.
2.4 Vcc+0.5
– 0.5
0.8
2.4 –
– 0.4
– 20 20
– 10 10
– 960
– 880
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
µA 1)
µA 1)
mA 2) 3) 4)
mA
Standby VCC supply current
(RAS = CAS = VIH)
Average VCC supply current
during RAS only refresh cycles
(RAS cycling, CAS = VIH, tRC = tRC min)
-50 version
-60 version
ICC2
ICC3
–
–
–
32 mA
960 mA 2) 4)
880 mA
Semiconductor Group
5
5 Page 
Package Outline
3.38
107.95
101.19
HYM328025S/GS-50/-60
8M × 32-Bit EDO-Module
8.89 max
2.03
6.35
1.27
Detail of Contacts
R 1.57 +/- 0.05
6.35 +/- 0.05
95.25 +/- 0.05
1.27
+0.10
-0.08
1.27
1.04+/- 0.05
Tolerances : +/- 0.13 unless otherwise specified
Module Package, L-SIM-72-15
(Single in-Line Memory Module)
file: LSIM7215.DRW/WMF
Dimensions in mm
GLS05859
Semiconductor Group
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HYM328025GS-60.PDF ] | |
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