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PDF HYM328020S Data sheet ( Hoja de datos )
| Número de pieza | HYM328020S | |
| Descripción | 8M x 32-Bit Dynamic RAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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8M × 32-Bit Dynamic RAM Module
HYM 328020S/GS-50/-60
• SIMM modules with 8 388 608 words by 32-bit organization
for PC main memory applications
• Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 5280 mW active (-50 version)
max. 4840 mW active (-60 version)
CMOS – 88 mW standby
TTL –176 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 16 decoupling capacitors mounted on substrate
• All inputs, outputs and clocks fully TTL compatible
• 72 pin Single in-Line Memory Module (L-SIM-72) with 25.40 mm height
• Utilizes sixteen 4Mx4-DRAMs in SOJ packages
• 2048 refresh cycles / 32 ms
• Optimized for use in byte-write non-parity applications
• Tin-Lead contact pads (S- version)
• Gold contact pads (GS -version)
Semiconductor Group
1
1.96
1 page  
HYM 328020S/GS-50/-60
8M × 32-Bit
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range......................................................................................... – 55 to 125 °C
Input/output voltage ............................................................................ –0.5V to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 6.72 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VSS = 0 V, VCC = 5 V ± 10 %; tT = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
(0 V ≤ VIH ≤ Vcc + 0.3V, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V ≤ VOUT ≤ Vcc + 0.3V)
IO(L)
Average VCC supply current:
-50 ns version
-60 ns version
ICC1
(RAS, CAS, address cycling: tRC = tRC min.)
Standby VCC supply current
(RAS = CAS = VIH)
ICC2
Average VCC supply current, during RAS-only ICC3
refresh cycles:
-50 ns version
-60 ns version
(RAS cycling, CAS = VI,H, tRC = tRC min.)
Average VCC supply current,
during fast page mode: -50 ns version
ICC4
-60 ns version
(RAS = VIL, CAS, address cycling:tPC = tPC min.)
2.4
– 0.5
2.4
–
– 20
– 10
Vcc+0.5
0.8
–
0.4
20
10
– 960
– 880
– 32
– 960
– 880
– 320
– 280
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
µA 1)
µA 1)
mA 2) 3) 4)
mA 2) 3) 4)
mA –
mA 2) 4)
mA 2) 4)
mA 2) 3) 4)
mA 2) 3) 4)
Semiconductor Group
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HYM328020S.PDF ] | |
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