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PDF HYM328000GD- Data sheet ( Hoja de datos )
| Número de pieza | HYM328000GD- | |
| Descripción | 8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE | |
| Fabricantes | Siemens | |
| Logotipo |  |
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8M × 32-Bit Dynamic RAM Module
SMALL OUTLINE MEMORY MODULE
HYM 328000GD-50/-60
Preliminary Information
• 8 388 608 words by 32-bit organization
• Fast access and cycle time
50 ns access time
95 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
• Single + 3.3 V (± 0.3 V) supply
• Low power dissipation
max. 2016 mW active (-50 version)
max. 1728 mW active (-60 version)
LVCMOS – 3.6 mW standby
LVTTL – 28.8 mW standby
• CAS-before-RAS refresh, RAS-only-refresh, Self Refresh
• 4 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 72 pin, dual read-out, one bank, Small Outline DIMM Module
• Utilizes four 8M × 8 -DRAMs (HYB 3165800T)
• 4096 refresh cycles / 64 ms
• Gold contact pad
Semiconductor Group
187
11.94
1 page  
HYM328000GD-50/-60
8M x 32 SO-DIMM
Absolute Maximum Ratings 1)
Operating temperature range..............................................................................................0 to 70 ˚C
Storage temperature range.........................................................................................– 55 to 150 ˚C
Soldering temperature.............................................................................................................260 ˚C
Soldering time..............................................................................................................................10 s
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
DC Characteristics
TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3 V ± 0.3 V
Parameter
Symbol Limit Values
min. max.
Input high voltage
Input low voltage
Output high voltage (LVTTL)
Output „H“ level voltage (Iout = -2mA)
VIH 2.0 Vcc+0.3
VIL – 0.3 0.8
VOH 2.4 –
Output low voltage (LVTTL)
Output „L“level voltage (Iout = +2mA)
VOL –
0.4
Output high voltage (LVCMOS)
Output „H“ level voltage (Iout = -100uA)
VOH Vcc-0.2 -
Ouput low voltage (LVCMOS)
Output „L“ level voltage (Iout = +100uA)
VOL -
0.2
Input leakage current,any input
(0 V < Vin < Vcc , all other pins = 0 V
II(L) – 10 10
Output leakage current
(DO is disabled, 0 V < Vout < Vcc )
IO(L) – 10 10
Average Vcc supply current:
ICC1
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
–
–
560
480
Standby Vcc supply current
(RAS=CAS= Vih)
ICC2 –
8
Average Vcc supply current, during RAS-only
ICC3
refresh cycles:
-50 ns version
-60 ns version
(RAS cycling: CAS = VIH: tRC = tRC min.)
–
–
560
480
Unit Note
V 2)
V 2)
V
V
V 6)
V 6)
µA
µA
mA 3) 4) 5)
mA
mA –
mA 3) 5)
mA
Semiconductor Group
191
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HYM328000GD-.PDF ] | |
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