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PDF HYM324020S Data sheet ( Hoja de datos )
| Número de pieza | HYM324020S | |
| Descripción | 4M x 32-Bit Dynamic RAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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4M x 32-Bit Dynamic RAM Module
HYM 324020S/GS-60/-70
Preliminary Information
• 4 194 304 words by 32-bit organization
(alternative 8 388 608 words by 16-bit)
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 4840 mW active
(HYM 324020S/GS-60)
max. 4400 mW active
(HYM 324020S/GS-70)
CMOS – 44 mW standby
TTL – 88 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 8 decoupling capacitors mounted on
substrate
• All inputs, outputs and clocks fully TTL
compatible
• 72 pin Single in-Line Memory Module with
22.86 mm (900 mil) height
• Utilizes eight 4Mx4-DRAMs in 300mil wide
SOJ-packages
• 2048 refresh cycles / 32 ms
• Tin-Lead contact pads (S - version)
• Gold contact pads (GS - version)
Ordering Information
Type
HYM 324020S-60
Ordering Code
Q67100-Q979
Package
L-SIM-72-12
HYM 324020S-70
Q67100-Q980 L-SIM-72-12
HYM 324020GS-60
Q67100-Q2005 L-SIM-72-12
HYM 324020GS-70
on request
L-SIM-72-12
Semiconductor Group
571
Description
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
09.94
1 page  
HYM 324020S/GS-60/-70
4M x 32-Bit
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 ˚C
Storage temperature range......................................................................................... – 55 to 125 ˚C
Soldering temperature ............................................................................................................ 260 ˚C
Soldering time ............................................................................................................................. 10 s
Input/output voltage ........................................................................ – 0.5 V to min (VCC + 0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 6.16 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
DC Characteristics1)
TA = 0 to 70 ˚C, VCC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
IO(L)
Average VCC supply current
ICC1
(RAS, CAS, address cycling, tRC = tRC min)
60 ns - Version
70 ns - Version
Limit Values Unit
min.
max.
2.4
– 0.5
VCC + 0.5 V
0.8 V
2.4 –
V
– 0.4 V
– 20 20
µA
– 10 10
µA
– 880 mA
– 800 mA
Test
Condition
2)
3)
Standby VCC supply current
(RAS = CAS = VIH)
Average VCC supply current
during RAS only refresh cycles
(RAS cycling, CAS = VIH, tRC = tRC min)
60 ns - Version
70 ns - Version
ICC2
ICC3
–
–
–
16 mA
880 mA 2)
800 mA
Semiconductor Group
575
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HYM324020S.PDF ] | |
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