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PDF HYM322160S Data sheet ( Hoja de datos )
| Número de pieza | HYM322160S | |
| Descripción | 2M x 32-Bit Dynamic RAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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2M x 32-Bit Dynamic RAM Module
HYM 322160S/GS-60/-70
Advanced Information
• 2 097 152 words by 32-Bit organization
(alternative 4 194 304 words by 16-Bit)
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 4840 mW active (-60 version)
max. 4400 mW active (-70 version)
CMOS – 88 mW standby
TTL – 176 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 8 decoupling capacitors mounted on
substrate
• All inputs, outputs and clocks fully TTL
compatible
• 72 pin double-sided Single in-Line Memory
Module with 25.4 mm (1000 mil) height
• Utilizes sixteen 1M × 4 DRAMs in 300 mil
SOJ packages
• 1024 refresh cycles / 16 ms
• Tin-Lead contact pads (S - version)
• Gold contact pads (GS - version)
Ordering Information
Type
HYM 322160S-60
Ordering Code
Q67100-Q2014
Package
L-SIM-72-11
HYM 322160S-70
Q67100-Q2015 L-SIM-72-11
HYM 322160GS-60
Q67100-Q2016 L-SIM-72-11
HYM 322160GS-70
Q67100-Q2017 L-SIM-72-11
Description
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
Semiconductor Group
551
09.94
1 page  
HYM 322160S/GS-60/-70
2M x 32-Bit
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 ˚C
Storage temperature range......................................................................................... – 55 to 125 ˚C
Soldering temperature ............................................................................................................ 260 ˚C
Soldering time ............................................................................................................................. 10 s
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation..................................................................................................................... 6.2 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics1)
TA = 0 to 70 ˚C, VCC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
IO(L)
Average VCC supply current
ICC1
(RAS, CAS, address cycling, tRC = tRC min)
-60 version
-70 version
Limit Values
min.
max.
2.4 5.5
– 1.0
0.8
2.4 –
– 0.4
– 20 20
– 20 20
– 880
– 800
Standby VCC supply current
(RAS = CAS = VIH)
ICC2
Average VCC supply current
ICC3
during RAS only refresh cycles
(RAS cycling, CAS = VIH, tRC = tRC min)
-60 version
-70 version
–
–
–
32
880
800
Unit Test
Condition
V
V
V
V
µA
µA
mA 2),
mA 3)
mA
mA 2)
mA
Semiconductor Group
555
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HYM322160S.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| HYM322160GS-60 | 2M x 32-Bit Dynamic RAM Module | Siemens |
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| HYM322160S | 2M x 32-Bit Dynamic RAM Module | Siemens |
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