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PDF HYM322035GS-70 Data sheet ( Hoja de datos )
| Número de pieza | HYM322035GS-70 | |
| Descripción | 2M x 32-Bit Dynamic RAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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2M x 32-Bit Dynamic RAM Module
HYM 322035S/GS-50/-60/-70
Advanced Information
• 2 097 152 words by 32-bit organization
• 1 memory bank
• Fast access and cycle time
50 ns access time
84 ns cycle time (-50 version)
60 ns access time
104 ns cycle time (-60 version)
70 ns access time
124 ns cycle time (-70 version)
• Hyper page mode - EDO capability
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 2640 mW active (-50 version)
max. 2420 mW active (-60 version)
max. 2200 mW active (-70 version)
CMOS – 22 mW standby
TTL –44 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 4 decoupling capacitors mounted on substrate
• All inputs, outputs and clocks fully TTL compatible
• 72 pin Single in-Line Memory Module (L-SIM-72-9 ) with 20.32 mm (800 mil) height
• Utilizes four 2M × 8 -DRAMs in 400 mil SOJ packages
• 2048 refresh cycles / 32 ms with 11/10 addressing
• Optimized for use in byte-write non-parity applications
• Tin-Lead contact pads (S-version)
• Gold contact pads (GS - version)
Semicuonductor Group
1
2.96
1 page  
HYM 322035S/GS-50/-60/-70
2M × 32-Bit EDO-Module
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range......................................................................................... – 55 to 125 °C
Input/output voltage ............................................................................–0.5V to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation..................................................................................................................... 4.2 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VCC = 5 V ± 10 %
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
Average VCC supply current
(RAS, CAS, address cycling, tRC = tRC min)
-50 version
-60 version
-70 version
Symbol
VIH
VIL
VOH
VOL
II(L)
IO(L)
ICC1
Limit Values
min.
max.
2.4 Vcc+0.5
– 0.5
0.8
2.4 –
– 0.4
– 10 10
– 10 10
– 480
– 440
– 400
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
µA 1)
µA 1)
mA 2),3),4)
mA
mA
Standby VCC supply current
(RAS = CAS = VIH)
Average VCC supply current
during RAS only refresh cycles
(RAS cycling, CAS = VIH, tRC = tRC min)
-50 version
-60 version
-70 version
ICC2
ICC3
–
–
–
–
8 mA
480 mA 2), 4)
440 mA
400 mA
Semiconductor Group
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HYM322035GS-70.PDF ] | |
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