|
|
Numéro de référence | HYM322030S | ||
Description | 2M x 32-Bit Dynamic RAM Module | ||
Fabricant | Siemens | ||
Logo | |||
2M x 32-Bit Dynamic RAM Module
HYM 322030S/GS-60/-70
Advanced Information
• 2 097 152 words by 32-bit organization
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 3300 mW active (-60 version)
max. 3025 mW active (-70 version)
CMOS – 22 mW standby
TTL – 44 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 4 decoupling capacitors mounted on
substrate
• All inputs, outputs and clocks fully TTL
compatible
• 72 pin Single in-Line Memory Module
(L-SIM-72-9 ) with 20.32 mm (800 mil) height
• Utilizes four 2M × 8 - DRAMs in 400 mil
SOJ-packages
• 2048 refresh cycles / 32 ms
• Tin-Lead contact pads (S - version)
• Gold contact pads (GS - version)
Ordering Information
Type
HYM 322030S-60
Ordering Code
Q67100-Q976
Package
L-SIM-72-9
HYM 322030S-70
Q67100-Q977 L-SIM-72-9
HYM 322030GS-60
Q67100-Q2018 L-SIM-72-9
HYM 322030GS-70
Q67100-Q2019 L-SIM-72-9
Description
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
Semiconductor Group
561
09.94
|
|||
Pages | Pages 9 | ||
Télécharger | [ HYM322030S ] |
No | Description détaillée | Fabricant |
HYM322030GS-50 | 2M x 32-Bit Dynamic RAM Module | Siemens |
HYM322030GS-60 | 2M x 32-Bit Dynamic RAM Module | Siemens |
HYM322030GS-60 | 2M x 32-Bit Dynamic RAM Module | Siemens |
HYM322030GS-70 | 2M x 32-Bit Dynamic RAM Module | Siemens |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |