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Numéro de référence | HYM322030GS-60 | ||
Description | 2M x 32-Bit Dynamic RAM Module | ||
Fabricant | Siemens | ||
Logo | |||
2M x 32-Bit Dynamic RAM Module
HYM 322030S/GS-50/-60/-70
Advanced Information
• 2 097 152 words by 32-bit organization
• 1 memory bank
• Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 2640 mW active (-50 version)
max. 2420 mW active (-60 version)
max. 2200 mW active (-70 version)
CMOS – 22 mW standby
TTL –44 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 4 decoupling capacitors mounted on substrate
• All inputs, outputs and clocks fully TTL compatible
• 72 pin Single in-Line Memory Module (L-SIM-72-9 ) with 20.32 mm (800 mil) height
• Utilizes four 2M × 8 -DRAMs in 400 mil SOJ packages
• 2048 refresh cycles / 32 ms with 11/10 addressing
• Optimized for use in byte-write non-parity applications
• Tin-Lead contact pads (S-version)
• Gold contact pads (GS - version)
Semicuonductor Group
1
9.95
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Pages | Pages 10 | ||
Télécharger | [ HYM322030GS-60 ] |
No | Description détaillée | Fabricant |
HYM322030GS-60 | 2M x 32-Bit Dynamic RAM Module | Siemens |
HYM322030GS-60 | 2M x 32-Bit Dynamic RAM Module | Siemens |
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