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PDF HYM322005GS-60 Data sheet ( Hoja de datos )
| Número de pieza | HYM322005GS-60 | |
| Descripción | 2M x 32-Bit Dynamic RAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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2M × 32-Bit Dynamic RAM Module
(Hyper Page Mode - EDO Version)
HYM 322005S/GS-50/-60
• SIMM modules with 2 097 152 words by 32-bit organization
for PC main memory application
• Fast access and cycle time
50 ns access time
84 ns cycle time (-50 version)
60 ns access time
104 ns cycle time (-60 version)
• Hyper page mode - EDO capability with
20 ns cycle time (-50 version)
25 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 2200 mW active (-50 version)
max. 1980 mW active (-60 version)
CMOS – 22 mW standby
TTL – 44 mW standby
• CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh
• 4 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 72 pin Single in-Line Memory Module
• Utilizes four 1M × 16 -DRAMs in SOJ-42 packages
• 1024 refresh cycles / 16 ms
• Optimized for use in byte-write non-parity applications
• Tin-Lead contact pad HYM 322005S
• Gold-Lead contact pad HYM 322005GS
• single sided module with 20.32 mm (800 mil) height
Semiconductor Group
1
9.96
1 page  
HYM 322005S/GS-50/-60
2M × 32-Bit EDO-Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 2.52 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VSS = 0 V, VCC = 5 V ± 10 %; tT = 2 ns
Parameter
Symbol
Limit Values
min.
max.
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current
(0 V ≤ VIH ≤ Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V ≤ VOUT ≤ Vcc + 0.3V)
Average VCC supply current:
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
Standby VCC supply current
(RAS = CAS = VIH)
Average VCC supply current, during RAS-only
refresh cycles:
-50 ns version
-60 ns version
(RAS cycling, CAS = VI,H, tRC = tRC min.)
Average VCC supply current,during hyper page
mode (EDO):
-50 ns version
-60 ns version
(RAS = VIL, CAS, address cycling:
(tHPC = tHPC min.)
VIH
VIL
VOH
VOL
II(L)
IO(L)
ICC1
ICC2
ICC3
ICC4
2.4
– 0.5
2.4
–
– 10
– 10
Vcc+0.5
0.8
–
0.4
10
10
– 400
– 360
–8
– 400
– 360
– 180
– 150
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
µA 1)
µA 1)
mA 2) 3) 4)
mA 2) 3) 4)
mA –
mA 2) 4)
mA 2) 4)
mA 2) 3) 4)
mA 2) 3) 4)
Semiconductor Group
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HYM322005GS-60.PDF ] | |
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