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PDF HYM321160S Data sheet ( Hoja de datos )
| Número de pieza | HYM321160S | |
| Descripción | 1M x 32-Bit Dynamic RAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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1M x 32-Bit Dynamic RAM Module
(2M x 16-Bit Dynamic RAM Module)
HYM 321160S/GS-60/-70
Advanced Information
• 1 048 576 words by 32-bit organization
(alternative 2 097 152 words by 16-bit)
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 4840 mW active (-60 version)
max. 4400 mW active (-70 version)
CMOS – 44 mW standby
TTL – 88 mW standby
• CAS-before-RAS refresh, RAS-only-refresh,
Hidden refresh
• 8 decoupling capacitors mounted on
substrate
• All inputs, outputs and clock fully TTL
compatible
• 72 pin Single in-Line Memory Module
• Utilizes eight 1M × 4-DRAMs in 300 mil SOJ
packages
• 1024 refresh cycles /16 ms
• Tin-Lead contact pads (S - version)
• Gold contact pads (GS - version)
• single sided module with 25.4 mm (1000 mil)
height
Ordering Information
Type
HYM 321160S-60
Ordering Code
Q67100-Q2010
HYM 321160S-70
on request
HYM 321160GS-60 Q67100-Q2009
HYM 321160GS-70 on request
Package
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
Descriptions
DRAM module
(access time 60 ns)
DRAM module
(access time 70 ns)
DRAM module
(access time 60 ns)
DRAM module
(access time 70 ns)
Semiconductor Group
541
09.94
1 page  
HYM 321160S/GS-60/-70
1M x 32-Bit
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 ˚C
Storage temperature range...................................................................................... – 55 to + 125 ˚C
Soldering temperature ............................................................................................................ 260 ˚C
Soldering time ............................................................................................................................. 10 s
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 6.16 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics 1)
TA = 0 to 70 ˚C; VCC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
IO(L)
Average VCC supply current:
ICC1
-60 version
-70 version
Limit Values
min.
max.
2.4 5.5
– 1.0
0.8
2.4 –
– 0.4
– 20 20
– 10 10
– 880
– 800
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current
(RAS = CAS = VIH)
ICC2
Average VCC supply current during RAS
only refresh cycles:
ICC3
-60 version
-70 version
–
–
–
16
880
800
(RAS cycling, CAS = VIH , tRC = tRC min.)
Unit Test
Condition
V–
V–
V–
V–
µA –
µA –
mA 2), 3)
mA
mA –
2)
mA
mA
Semiconductor Group
545
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HYM321160S.PDF ] | |
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