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PDF HYM321000GS-60 Data sheet ( Hoja de datos )
| Número de pieza | HYM321000GS-60 | |
| Descripción | 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module | |
| Fabricantes | Siemens | |
| Logotipo |  |
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1M × 32-Bit Dynamic RAM Module
(2M × 16-Bit Dynamic RAM Module)
HYM 321000S/GS-50/-60
Advanced Information
• 1 048 576 words by 32-bit organization
(alternative 2 097 152 words by 16-bit)
• Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max 2200 mW active (-50 version)
max. 1980 mW active (-60 version)
CMOS – 11 mW standby
TTL – 22 mW standby
• CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh
• 2 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 72 pin Single in-Line Memory Module
• Utilizes two 1M × 16 -DRAMs in SOJ-42 packages
• 1024 refresh cycles/16 ms
• Optimized for use in byte-write non-parity applications
• Tin-Lead contact pads HYM 321000S
• Gold-Lead contact pads HYM 321000GS
• single sided module with 20.32 mm (800 mil) height
Semiconductor Group
1
12.95
1 page  
HYM 321000S/GS-50/-60
1M × 32-Bit
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ........................................................................... – 0.5 to min (Vcc + 0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 2.52 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics 1)
TA = 0 to 70 °C; VCC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
IO(L)
Average VCC supply current:
ICC1
HYM 321000S/GS-50
HYM 321000S/GS-60
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current
(RAS = CAS = VIH)
ICC2
Average VCC supply current during RAS
only refresh cycles:
ICC3
HYM 321000S/GS-50
HYM 321000S/GS-60
(RAS cycling, CAS = VIH , tRC = tRC min.)
Limit Values
min.
max.
2.4 5.5
– 1.0
0.8
2.4 –
– 0.4
– 10 10
– 10 10
– 400
– 360
–
–4
– 400
– 360
–
Unit Test
Condition
V–
V–
V–
V–
µA –
µA –
mA
mA
2), 3),4)
mA –
2),4)
mA
mA
Semiconductor Group
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HYM321000GS-60.PDF ] | |
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