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PDF HYE18L128160BC-75 Data sheet ( Hoja de datos )
| Número de pieza | HYE18L128160BC-75 | |
| Descripción | Specialty DRAMs Mobile-RAM | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HYE18L128160BC-75 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Infineon Specialty DRAMs
Mobile-RAM
w w w. i n f i n e o n . c o m / m e m o r y / M o b i l e - R A M
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Density
128 Mb
8 M x 16
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256 Mb
16 M x 16
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512 Mb,Dual
16 M x 16
Part number
HYB39L128160AT-7.5
HYB39L128160AC-7.5
HYB25L128160AC-7.5
HYE25L128160AC-7.5
HYB18L128160BF-7.5
HYE18L128160BF-7.5
HYB18L128160BC-7.5
HYE18L128160BC-7.5
HYB39L256160AT-7.5
HYB39L256160AC-7.5
HYB25L256160AC-7.5
HYE25L256160AC-7.5
HYB25L256160AF-7.5
HYE25L256160AF-7.5
HYB18L256160BF-7.5
HYE18L256160BF-7.5
HYB18L256160BC-7.5
HYE18L256160BC-7.5
HYB25L512160AC-7.5
Temp. Power
Power
# of GREEN
OCTS TCSR PASR DPD DS
Package
range supply core supply I/O banks
product
0 - 70°C
0 - 70°C
0 - 70°C
-25 - 85°C
0 - 70°C
-25 - 85°C
0 - 70°C
-25 - 85°C
3.3 V
3.3 V
2.5 V
2.5 V
1.8 V
1.8 V
1.8 V
1.8 V
3.3 V
3.3 V
2.5 V / 1.8 V
2.5 V / 1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
4
4
4
4
4
4
4
4
– – –––
– – –––
– X XX–
– X XX–
X – XXX
X – XXX
X – XXX
X – XXX
– TSOP-54
– FBGA-54
– FBGA-54
– FBGA-54
X FBGA-54
X FBGA-54
– FBGA-54
– FBGA-54
0 - 70°C 3.3 V
0 - 70°C 3.3 V
0 - 70°C 2.5 V
-25 - 85°C 2.5 V
3.3 V
0 - 70°C
or 2.5 V
3.3 V
3.3 V
2.5 V / 1.8 V
2.5 V / 1.8 V
3.3 V or
2.5 V / 1.8 V
4
4
4
4
4
– – –––
– – –––
X X XX–
X X XX–
X X XX–
– TSOP-54
– FBGA-54
– FBGA-54
– FBGA-54
X FBGA-54
3.3 V
-25 - 85°C
or 2.5 V
3.3 V or
2.5 V / 1.8 V
4
X X XX–
X FBGA-54
0 - 70°C 1.8 V
-25 - 85°C 1.8 V
0 - 70°C 1.8 V
-25 - 85°C 1.8 V
3.3 V
0 - 70°C
or 2.5 V
1.8 V
1.8 V
1.8 V
1.8 V
3.3 V or
2.5 V / 1.8 V
4
4
4
4
4
X – XXX
X – XXX
X – XXX
X – XXX
X – XX–
X FBGA-54
X FBGA-54
– FBGA-54
– FBGA-54
– FBGA-54
Speed: 133 MHz CAS Latency: 3-3-3
OCTS (On-Chip Temperature Sensor):
The built-in temperature sensor adapts the refresh
rate to the actual junction temperature of the chip
without draining any CPU power. (Note: with
standard DRAMs, the refresh rate is set to work at
the max. temperature.)
TCSR (Temperature-Compensated Self-Refresh):
Same as OCTS but externally triggered
CPU power required
PASR (Partial Array Self-Refresh):
Allows user to select volume of memory needed to
further reduce power consumption
Adjustable from all 4 banks to 1/16 array
DPD (Deep Power-Down):
Maximum power consumption reduction by cutting
off power supply to Mobile-RAM
Data is not retained
DS (Selectable Drive Strength):
Can be adjusted to reflect bus load, e.g. half
strength for point-to-point and full strength for
module applications
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HYE18L128160BC-75.PDF ] | |
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