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PDF HYB514405BJL-70 Data sheet ( Hoja de datos )
| Número de pieza | HYB514405BJL-70 | |
| Descripción | 1M x 4-Bit Dynamic RAM | |
| Fabricantes | Siemens | |
| Logotipo |  |
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1M x 4-Bit Dynamic RAM
(Hyper Page Mode (EDO) version)
HYB 514405BJ/BJL-50/-60/-70
Preliminary Information
• 1 048 576 words by 4-bit organization
• 0 to 70 ˚C operating temperature
• Hyper Page Mode - EDO
• Performance:
tRAC RAS access time
tCAC CAS access time
tAA Access time from address
tRC Read/Write cycle time
tHPC Hyper page mode (EDO)
cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
89 104 124 ns
20 25 30 ns
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 660 mW active (-50 version)
max. 605 mW active (-60 version)
max. 550 mW active (-70 version)
• Standby power dissipation:
11 mW max.standby (TTL)
5.5 mW max.standby (CMOS)
1.1 mW max.standby (CMOS) for Low Power Version
• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
• All inputs and outputs TTL-compatible
• 1024 refresh cycles / 16 ms
• 1024 refresh cycles / 128 ms for Low Power Version
• Plastic Packages: P-SOJ-26/20-5 with 300 mil width
Semiconductor Group
1
5.96
1 page  
HYB 514405BJ/BJL-50/-60/-70
1M x 4 EDO - DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 ˚C
Storage temperature range......................................................................................– 55 to + 150 ˚C
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power Supply voltage ..................................................................................................... – 1 to + 7 V
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 ˚C, VSS = 0 V, VCC = 5 V ± 10 %, tT = 2 ns
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current, any input
(0 V < Vin < 7, all other input = 0 V)
Output leakage current
(DO is disabled, 0 < VOUT < VCC)
Average VCC supply current
-50 version
-60 version
-70 version
Symbol
Vih
Vil
Voh
Vol
II(L)
Limit Values
min.
max.
2.4
– 1.0
VCC + 0.5
0.8
2.4 –
– 0.4
– 10 10
Unit
V
V
V
V
µA
Test
Condition
1)
1)
1)
1)
1)
Io(L) – 10 10
µA 1)
ICC1
–
–
–
mA 2) 3)4)
120
110
100
Standby VCC supply current
(RAS = CAS = WE = Vih)
Average VCC supply current during RAS-only
refresh cycles
-50 version
-60 version
-70 version
ICC2
ICC3
Average VCC supply current during hyper page
mode(EDO) operation
-50 version
-60 version
-70 version
ICC4
Standby VCC supply current
(RAS = CAS = WE = VCC – 0.2 V)
ICC5
–
–
–
–
–
–
–
–
2 mA –
mA 2)4)
120
110
100
mA 2) 3)4)
100
90
80
1 mA 1)
200 µA L-version
Semiconductor Group
5
5 Page 
HYB 514405BJ/BJL-50/-60/-70
1M x 4 EDO - DRAM
Read Cycle
Semiconductor Group
11
11 Page | ||
| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet HYB514405BJL-70.PDF ] | |
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