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PDF HYB514175BJ-60 Data sheet ( Hoja de datos )
| Número de pieza | HYB514175BJ-60 | |
| Descripción | 256k x 16-Bit EDO-DRAM | |
| Fabricantes | Siemens | |
| Logotipo |  |
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256k × 16-Bit EDO-DRAM
HYB 514175BJ-50/-55/-60
Advanced Information
• 262 144 words by 16-bit organization
• 0 to 70 °C operating temperature
• Fast access and cycle time
• RAS access time:
50 ns (-50 version)
55 ns (-55 version)
60 ns (-60 version)
• CAS access time:
13 ns (-50 & -55 version)
15 ns (-60 version)
• Cycle time:
89 ns (-50 version)
94 ns (-55 version)
104 ns (-60 version)
• Hyper page mode (EDO) cycle time
20 ns (-50 & -55 version)
25 ns (-60 version)
• High data rate
50 MHz (-50 & -55 version)
40 MHz (-60 version)
• Single + 5 V (± 10 %) supply with a built-in
VBB generator
• Low Power dissipation
max. 1100 mW active (-50 version)
max. 1045 mW active (-55 version)
max. 935 mW active (-60 version)
• Standby power dissipation
11 mW standby (TTL)
5.5 mW max. standby (CMOS)
• Output unlatched at cycle end allows
two-dimensional chip selection
• Read, write, read-modify write,
CAS-before-RAS refresh, RAS-only
refresh, hidden-refresh and hyper page
(EDO) mode capability
• 2 CAS/1 WE control
• All inputs and outputs TTL-compatible
• 512 refresh cycles/16 ms
• Plastic Packages:
P-SOJ-40-1 400 mil width
Semiconductor Group
1
1998-10-01
1 page  
HYB 514175BJ-50/-55/-60
256k × 16 EDO-DRAM
Absolute Maximum Ratings
Operating temperature range ....................................................................................... 0 to + 70 °C
Storage temperature range.................................................................................... – 55 to + 150 °C
Input/output voltage ....................................................................................................... – 1 to + 6 V
Power supply voltage..................................................................................................... – 1 to + 6 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; VCC = 5 V ± 10 %, tT = 2 ns
Parameter
Symbol
Limit Values
min.
max.
Unit Test
Condition
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5.0 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current, any input
(0 V < VIN < 7 V, all other inputs = 0 V)
Output leakage current
(DO is disabled, 0 V < VOUT < VCC)
Average VCC supply current
-50 version
-55 version
-60 version
VIH
VIL
VOH
VOL
II(L)
IO(L)
ICC1
2.4
– 1.0
2.4
–
– 10
– 10
–
VCC + 0.5 V
0.8 V
–V
0.4 V
10 µA
1
1
1
1
1
10 µA 1
200
mA 2, 3, 4
190
170
Standby VCC supply current
(RAS = LCAS = UCAS = WE = VIH)
Average VCC supply current during
RAS-only refresh cycles
-50 version
-55 version
-60 version
ICC2
ICC3
–
–
2 mA
200 mA 2, 4
190
170
Average VCC supply current during
hyper page mode (EDO) operation
ICC4
-50 version
-55 version
-60 version
–
2, 3, 4
190 mA
180
170
Semiconductor Group
5
1998-10-01
5 Page 
HYB 514175BJ-50/-55/-60
256k × 16 EDO-DRAM
VIH
RAS
VIL
UCAS
LCAS
VIH
VIL
Address
VIH
VIL
VIH
WE
VIL
VIH
OE
VIL
I/O
(Inputs)
VIH
VIL
I/O VOH
(Outputs) VOL
t RAS
t RC
t RCD
t CSH
t RSH
t CAS
t ASR
t RAD
t ASC
Row
t RAH
t WCS
t RAL
t CAH
Column
t CWL
t WP
t WCH
t RWL
t DS t DH
Valid Data IN
Hi Z
"H" or "L"
Write Cycle (Early Write)
t RP
t CRP
t ASR
Row
SPT03044
Semiconductor Group
11
1998-10-01
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet HYB514175BJ-60.PDF ] | |
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