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Numéro de référence | HYB514100BJ-50 | ||
Description | 4M x 1-Bit Dynamic RAM | ||
Fabricant | Siemens | ||
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1 Page
4M × 1-Bit Dynamic RAM
HYB 514100BJ-50/-60
Advanced Information
• 4 194 304 words by 1-bit organization
• 0 to 70 °C operating temperature
• Fast Page Mode Operation
• Performance:
tRAC RAS access time
tCAC CAS access time
tAA Access time from address
tRC Read/Write cycle time
tPC Fast page mode cycle time
-50 -60
50 60 ns
13 15 ns
25 30 ns
95 110 ns
35 40 ns
• Single + 5 V (± 10 %) supply with a built-in VBB generator
• Low power dissipation
max. 660 mW active (-50 version)
max. 605 mW active (-60 version)
• Standby power dissipation:
11 mW max. standby (TTL)
5.5 mW max. standby (CMOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
• All inputs and outputs TTL-compatible
• 1024 refresh cycles/16 ms
• Plastic Packages: P-SOJ-26/20-2 with 300 mil width
Semiconductor Group
1
1998-10-01
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Pages | Pages 21 | ||
Télécharger | [ HYB514100BJ-50 ] |
No | Description détaillée | Fabricant |
HYB514100BJ-50 | 4M x 1-Bit Dynamic RAM | Siemens |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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