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PDF HYB5116405BJ-50 Data sheet ( Hoja de datos )
| Número de pieza | HYB5116405BJ-50 | |
| Descripción | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
| Fabricantes | Siemens | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HYB5116405BJ-50 (archivo pdf) en la parte inferior de esta página. Total 28 Páginas | ||
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4M × 4-Bit Dynamic RAM
2k & 4k Refresh
(Hyper Page Mode - EDO)
Advanced Information
• 4 194 304 words by 4-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode - EDO - operation
• Performance:
tRAC RAS access time
tCAC CAS access time
tAA Access time from address
tRC Read/Write cycle time
tHPC Hyper page mode (EDO) cycle time
HYB 5116405BJ-50/-60
HYB 5117405BJ-50/-60
HYB 3116405BJ/BT(L)-50/-60
HYB 3117405BJ/BT-50/-60
-50 -60
50 60 ns
13 15 ns
25 30 ns
84 104 ns
20 25 ns
• Power dissipation, refresh & addressing:
HYB 5116405 HYB 3116405 HYB 5117405 HYB 3117405
-50 -60 -50 -60 -50 -60 -50 -60
Power supply
5 V ± 10% 3.3 V ± 0.3 V 5 V ± 10% 3.3 V ± 0.3 V
Addressing
12/10
12/10
11/11
11/11
Refresh
4096 cylces / 64 ms
2048 cycles / 32 ms
L-version
4096 cycles / 128 ms
–
Active
275 220 180 144 440 385 288 252 mW
TTL Standby
11
7.2
11
7.2 mW
CMOS Standby
5.5
3.6
5.5
3.6 mW
CMOS Standby
(L-version)
–
0.72
–
– mW
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
test mode and Self Refresh (on L-versions only)
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• Plastic Package:
P-SOJ-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
Semiconductor Group
1
1998-10-01
1 page  
HYB 5116(7)405BJ-50/-60
HYB 3116(7)405BJ/BT(L)-50/-60
4M × 4 EDO-DRAM
I/O1 I/O2 I/O3 I/O4
WE &
CAS
Data In
Buffer
4
Data Out
Buffer
OE
4
No.2 Clock
Generator
11 Column
Address
A0 Buffers (11)
A1
A2 Refresh
A3 Controller
A4
A5
A6 Refresh
A7 Counter (11)
A8
11
A9
A10 11 Row
Address
Buffers (11)
RAS
No.1 Clock
Generator
11 Column
Decoder
Sense Amplifier
I/O Gating
2048
x4
4
11
Row
Decoder
...
2048
...
Memory Array
2048 x 2048 x 4
Voltage Down
Generator
V CC
V CC (internal)
SPB02823
Block Diagram for HYB 5(3)117405 (2k-refresh)
Semiconductor Group
5
1998-10-01
5 Page 
HYB 5116(7)405BJ-50/-60
HYB 3116(7)405BJ/BT(L)-50/-60
4M × 4 EDO-DRAM
AC Characteristics (cont’d) 5, 6
TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50 -60
min. max. min. max.
Test Mode
Write command setup time
Write command hold time
CAS hold time
RAS hold time in test mode
tWTS
tWTH
tCHRT
tRAHT
10 –
10 –
30 –
30 –
10 –
10 –
30 –
30 –
ns
ns
ns
ns
Semiconductor Group
11
1998-10-01
11 Page | ||
| Páginas | Total 28 Páginas | |
| PDF Descargar | [ Datasheet HYB5116405BJ-50.PDF ] | |
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