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Numéro de référence | HYB5116400BT-60 | ||
Description | 4M x 4-Bit Dynamic RAM | ||
Fabricant | Siemens | ||
Logo | |||
4M x 4-Bit Dynamic RAM
HYB5116400BJ -50/-60/-70
HYB5116400BT -50/-60/-70
Advanced Information
• 4 194 304 words by 4-bit organization
• 0 to 70 °C operating temperature
• Performance:
tRAC
tCAC
tAA
tRC
tPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
90 110 130 ns
35 40 45 ns
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 550 active mW (-50 version)
max. 495 active mW (-60 version)
max. 440 active mW (-70 version)
11 mW standby (TTL)
5.5. mW standby (MOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh and test mode
• Fast page mode capability
• All inputs, outputs and clocks fully TTL-compatible
• 4096 refresh cycles / 64 ms
• Plastic Package:
P-SOJ-26/24 300 mil
P TSOPII-26/24 300 mil
Semiconductor Group
1
1.96
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Pages | Pages 26 | ||
Télécharger | [ HYB5116400BT-60 ] |
No | Description détaillée | Fabricant |
HYB5116400BT-60 | 4M x 4-Bit Dynamic RAM | Siemens |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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