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HYB5116400BT-60 fiches techniques PDF

Siemens - 4M x 4-Bit Dynamic RAM

Numéro de référence HYB5116400BT-60
Description 4M x 4-Bit Dynamic RAM
Fabricant Siemens 
Logo Siemens 





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HYB5116400BT-60 fiche technique
4M x 4-Bit Dynamic RAM
HYB5116400BJ -50/-60/-70
HYB5116400BT -50/-60/-70
Advanced Information
4 194 304 words by 4-bit organization
0 to 70 °C operating temperature
Performance:
tRAC
tCAC
tAA
tRC
tPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
90 110 130 ns
35 40 45 ns
Single + 5 V (± 10 %) supply
Low power dissipation
max. 550 active mW (-50 version)
max. 495 active mW (-60 version)
max. 440 active mW (-70 version)
11 mW standby (TTL)
5.5. mW standby (MOS)
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh and test mode
Fast page mode capability
All inputs, outputs and clocks fully TTL-compatible
4096 refresh cycles / 64 ms
Plastic Package:
P-SOJ-26/24 300 mil
P TSOPII-26/24 300 mil
Semiconductor Group
1
1.96

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