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PDF HYB5116160BSJ-70 Data sheet ( Hoja de datos )

Número de pieza HYB5116160BSJ-70
Descripción 1M x 16-Bit Dynamic RAM
Fabricantes Siemens 
Logotipo Siemens Logotipo



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No Preview Available ! HYB5116160BSJ-70 Hoja de datos, Descripción, Manual

1M x 16-Bit Dynamic RAM
(4k-Refresh)
HYB5116160BSJ-50/-60/-70
Advanced Information
1 048 576 words by 16-bit organization
0 to 70 °C operating temperature
Performance:
tRAC
tCAC
tAA
tRC
tPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
90 110 130 ns
35 40 45 ns
Single + 5 V (± 10 %) supply
Low power dissipation
max. 550 active mW (-50 version)
max. 495 active mW (-60 version)
max. 440 active mW (-70 version)
11 mW standby (TTL)
5.5. mW standby (MOS)
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh
and self refresh
Fast page mode capability
2 CAS / 1 WE
All inputs, outputs and clocks fully TTL-compatible
4096 refresh cycles/64 ms
Plastic Package:
P-SOJ-42-1 400 mil
Semiconductor Group
1
1.96

1 page




HYB5116160BSJ-70 pdf
HYB 5116160BSJ-50/-60/-70
1M x 16-DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,7.0) V
Power supply voltage...................................................................................................-1.0V to 7.0 V
Power dissipation..................................................................................................................... 1.0 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics
TA = 0 to 70 °C, VSS = 0 V, VCC = 5 V ± 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current,any input
(0 V VIH Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V VOUT Vcc + 0.3V)
Average VCC supply current:
-50 ns version
-60 ns version
-70 ns version
VIH
VIL
VOH
VOL
II(L)
IO(L)
ICC1
2.4
– 0.5
2.4
– 10
– 10
Vcc+0.5
0.8
0.4
10
10
– 100
– 90
– 80
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
µA 1)
µA 1)
mA 2) 3) 4)
mA 2) 3) 4)
mA 2) 3) 4)
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current (RAS = CAS = VIH) ICC2
Average VCC supply current, during RAS-only ICC3
refresh cycles:
-50 ns version
-60 ns version
-70 ns version
2 mA –
100 mA 2) 4)
90 mA 2) 4)
80 mA 2) 4)
(RAS cycling: CAS = VIH, tRC = tRC min.)
Semiconductor Group
5

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HYB5116160BSJ-70 arduino
HYB 5116160BSJ-50/-60/-70
1M x 16-DRAM
RAS
V
IH
VIL
UCAS
LCAS
V
IH
VIL
V
IH
Address
VIL
V
IH
WE
VIL
V
IH
OE
VIL
V
I/O1-I/O16 IH
(Inputs) VIL
V
I/O1-I/O16 OH
(Outputs) VOL
tRC
tRAS
tRP
tCSH
tRCD
tRSH
tCAS
tASR
tRAD
tASC
tCAH
Row
Address
Column
Address
tRAL
tRAH tRCS
tAA
tOEA
tCRP
tASR
tRCH
tRRH
Row
Address
tDZC
tDZO
tCAC
tCLZ
Hi Z
tRAC
tODD
tCDD
tOEZ
tOFF
Valid Data Out
Hi Z
“H” or “L”
Read Cycle
Semiconductor Group
11

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