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PDF HYB511000BJL-60 Data sheet ( Hoja de datos )
| Número de pieza | HYB511000BJL-60 | |
| Descripción | 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM | |
| Fabricantes | Siemens | |
| Logotipo |  |
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1 M × 1-Bit Dynamic RAM
Low Power 1 M × 1-Bit Dynamic RAM
HYB 511000BJ-50/-60/-70
HYB 511000BJL-50/-60/-70
Advanced Information
• 1 048 576 words by 1-bit organization
• Fast access and cycle time
50 ns access time
95 ns cycle time (-50 version)
60 ns access time
130 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
45 ns (-70 version)
• Low power dissipation
max. 495 mW active (-50 version)
max. 440 mW active (-60 version)
max. 385 mW active (-70 version)
max. 5.5 mW standby
max. 1.1 mW standby for L-version
• Single + 5 V (± 10 %) supply with a built-in
VBB generator
• Output unlatched at cycle end allows two-
dimensional chip selection
• Common I/O capability using “early write”
operation
• Read-modify-write, CAS-before-RAS
refresh, RAS-only refresh, hidden-refresh,
fast page mode capability and test mode
capability
• All inputs, outputs and clocks
TTL-compatible
• 512 refresh cycles/8 ms
512 refresh cycles/64 ms
for L-version only
• Plastic Packages: P-SOJ-26/20-1
Ordering Information
Type
HYB 511000BJ-50
HYB 511000BJ-60
HYB 511000BJ-70
HYB 511000BJL-50
HYB 511000BJL-60
HYB 511000BJL-70
Ordering Code
Q67100-Q1056
Q67100-Q518
Q67100-Q519
on request
Q67100-Q526
Q67100-Q527
Package
P-SOJ-26/20-1
P-SOJ-26/20-1
P-SOJ-26/20-1
P-SOJ-26/20-1
P-SOJ-26/20-1
P-SOJ-26/20-1
Description
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
Semiconductor Group
33
01.95
1 page  
HYB 511000BJ/BJL-50/-60/-70
1 M × 1-DRAM
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 ˚C
Storage temperature range......................................................................................– 55 to + 150 ˚C
Soldering temperature ............................................................................................................260 ˚C
Soldering time .............................................................................................................................10 s
Input/output voltage ........................................................................................................ – 1 to + 7 V
Test Function Input voltage ....................................................................................... – 1 to + 10.5 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation..................................................................................................................... 0.6 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 ˚C; VSS = 0 V; VCC = 5 V ± 10 %
Parameter
Input high voltage
Input low voltage
Test enable input high voltage
Test disable input low voltage
Output high voltage (IOUT = – 5 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current, any input except TF
(0 V ≤ VIN ≤ 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V ≤ VOUT ≤ 5.5 V)
Average VCC supply current:
-50 version
-60 version
-70 version
(RAS, CAS, address cycling: tRC = tRC min.)
Standby VCC supply current (RAS = CAS = VIH)
Symbol
VIH
VIL
VIH(TF)
VIL(TF)
VOH
VOL
II(L)
IO(L)
ICC1
ICC2
Limit Values
min.
max.
2.4 6.5
– 1.0 0.8
VCC + 4.5 10.5
– 1.0
VCC + 1.0
2.4 –
– 0.4
– 10 10
– 10 10
– 90
– 80
– 70
–2
Unit
V
V
V
V
V
V
µA
µA
mA
mA
mA
mA
Test
Condition
1)
1)
1)
1)
1)
1)
1)
1)
2) 3)
2) 3)
2) 3)
–
Semiconductor Group
37
5 Page 
Waveforms
HYB 511000BJ/BJL-50/-60/-70
1 M × 1-DRAM
RAS
V
IH
VIL
CAS
V
IH
VIL
V
IH
A0 - A9
VIL
V
IH
WE
VIL
DO VOH
(Output) VOL
tRC
tRAS
tRP
tCSH
tRCD
tRSH
tCAS
tASR
tRAD
tASC
tCAH
Row
Address
Column
Address
tRAL
tRAH tRCS
tCRP
tASR
tRCH
tRRH
Row
Address
tAA
tCAC
tCLZ
Hi Z
tRAC
tOFF
Valid Data Out
Hi Z
“H” or “L”
Read Cycle
Semiconductor Group
43
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet HYB511000BJL-60.PDF ] | |
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