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FRF9150R fiches techniques PDF

Intersil - 23A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFETs

Numéro de référence FRF9150R
Description 23A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFETs
Fabricant Intersil 
Logo Intersil 





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FRF9150R fiche technique
June 1998
FRF9150D, FRF9150R,
FRF9150H
23A, -100V, 0.140 Ohm, Rad Hard,
P-Channel Power MOSFETs
Features
• 23A, -100V, rDS(ON) = 0.140
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
• Gamma Dot
• Photo Current
• Neutron
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si)
- Performance Permits Limited Use to 3000K RAD (Si)
- Survives 3E9 RAD (Si)/s at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
- 7.0nA Per-RAD (Si)/s Typically
- Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Package
TO-254AA
G
S
D
Description
Intersil Corporation has designed a series of SECOND GENERATION hardened
power MOSFETs of both N and P channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness
is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging
from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hard-
ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with
current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for
any desired deviations from the data sheet.
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Symbol
D
G
S
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain-Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC
TC
=
=
+25oC .
+100oC
.
.
Derated Above
......
......
+25oC
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PT
PT
..
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . .ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
FRF9150D, R, H
-100
-100
23
15
69
±20
125
50
1.00
69
23
69
-55 to +150
300
UNITS
V
V
A
A
A
V
W
W
W/oC
A
A
A
oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
4-1
File Number 3243.2

PagesPages 6
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