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Datasheet FRE9160D-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


FRE Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1FRE160D41A/ 100V/ 0.050 Ohm/ Rad Hard/ N-Channel Power MOSFETs

FRE160D, FRE160R, FRE160H June 1998 41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-258AA Features • 41A, 100V, RDS(on) = 0.050Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S
Intersil
Intersil
mosfet
2FRE160H41A/ 100V/ 0.050 Ohm/ Rad Hard/ N-Channel Power MOSFETs

FRE160D, FRE160R, FRE160H June 1998 41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-258AA Features • 41A, 100V, RDS(on) = 0.050Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S
Intersil
Intersil
mosfet
3FRE160R41A/ 100V/ 0.050 Ohm/ Rad Hard/ N-Channel Power MOSFETs

FRE160D, FRE160R, FRE160H June 1998 41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-258AA Features • 41A, 100V, RDS(on) = 0.050Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S
Intersil
Intersil
mosfet
4FRE260D31A/ 200V/ 0.080 Ohm/ Rad Hard/ N-Channel Power MOSFETs

FRE260D, FRE260R, FRE260H June 1998 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-258AA Features • 31A, 200V, RDS(on) = 0.080Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S
Intersil
Intersil
mosfet
5FRE260H31A/ 200V/ 0.080 Ohm/ Rad Hard/ N-Channel Power MOSFETs

FRE260D, FRE260R, FRE260H June 1998 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-258AA Features • 31A, 200V, RDS(on) = 0.080Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S
Intersil
Intersil
mosfet
6FRE260R31A/ 200V/ 0.080 Ohm/ Rad Hard/ N-Channel Power MOSFETs

FRE260D, FRE260R, FRE260H June 1998 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-258AA Features • 31A, 200V, RDS(on) = 0.080Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S
Intersil
Intersil
mosfet
7FRE264D23A/ 250V/ 0.130 Ohm/ Rad Hard/ N-Channel Power MOSFETs

FRE264D, FRE264R, FRE264H June 1998 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-258AA Features • 23A, 250V, RDS(on) = 0.130Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point S
Intersil
Intersil
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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