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FR303G fiches techniques PDF

Shanghai Sunrise Electronics - GLASS PASSIVATED FAST RECOVERY RECTIFIER

Numéro de référence FR303G
Description GLASS PASSIVATED FAST RECOVERY RECTIFIER
Fabricant Shanghai Sunrise Electronics 
Logo Shanghai Sunrise Electronics 





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FR303G fiche technique
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
FR301G THRU FR307G
GLASS PASSIVATED
FAST RECOVERY RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 3.0A
TECHNICAL
SPECIFICATION
FEATURES
• Molded case feature for auto insertion
• Glass passivated chip
• High current capability
• Low leakage current
• Fast switching for high efficiency
• High surge capability
• High temperature soldering guaranteed:
250oC/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
• Mounting position: Any
DO - 201AD
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL FR FR FR FR FR FR FR UNITS
301G 302G 303G 304G 305G 306G 307G
Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
(9.5mm lead length, at Ta=55oC)
IF(AV)
3.0
A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
IFSM
125
A
Maximum Instantaneous Forward Voltage
(at rated forward current )
Maximum DC Reverse Current
(at rated DC blocking voltage)
Ta=25oC
Ta=100oC
Maximum Reverse Recovery Ti
(Note 1)
VF
IR
trr
1.3
5.0
100
150 250 500
V
µA
µA
nS
Typical Junction Capacitance
(Note 2) CJ
40
Typical Thermal Resistance
(Note 3) Rθ(ja)
30
Storage and Operation Junction Temperature TSTG,TJ
-65 to +150
Note:
1.Reverse recovery condition IF=0.5A, IR=1.0A, Irr=0.25A
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc
3.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C. board mounted
pF
oC/W
oC
http://www.sse-diode.com

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