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Shanghai Sunrise Electronics - SURFACE MOUNT FAST SWITCHING RECTIFIER

Numéro de référence FR1M
Description SURFACE MOUNT FAST SWITCHING RECTIFIER
Fabricant Shanghai Sunrise Electronics 
Logo Shanghai Sunrise Electronics 





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FR1M fiche technique
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
FR1A THRU FR1M
SURFACE MOUNT FAST
SWITCHING RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
TECHNICAL
SPECIFICATION
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Open junction chip,silastic passivated
• Fast recovery for high efficiency
• High temperature soldering guaranteed:
260oC/10sec/at terminal
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
DSMA/DO-214AC
B
AC
I
D
F
GH
AB C D
MAX. .110(2.79) .177(4.50) .075(1.90) .012(0.305)
MIN. .100(2.54) .157(3.99) .052(1.32) .006(0.152)
EF GHI
MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52) .035(0.88)
MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76) .027(0.68)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated,for capacitive load,
derate current by 20%)
RATINGS
SYMBOL FR FR FR FR FR FR FR UNITS
1A 1B 1D 1G 1J 1K 1M
Maximum Repetitive Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
(TL=110oC)
IF(AV)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
IFSM
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Maximum Reverse Recovery Time
Ta=25oC
Ta=125oC
(Note 1)
VF
IR
trr
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
1.0 A
30
1.3
5.0
200
150 250 500
A
V
µA
µA
nS
Typical Junction Capacitance
(Note 2) CJ
15 pF
Typical Thermal Resistance
(Note 3) Rθ(ja)
30
oC/W
Storage and Operation Junction Temperature TSTG,TJ
-50 to +150
oC
Note:
1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
http://www.sse-diode.com

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