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PDF TDA4916GG Data sheet ( Hoja de datos )
| Número de pieza | TDA4916GG | |
| Descripción | SMPS-IC with MOSFET Driver Output | |
| Fabricantes | Siemens Semiconductor | |
| Logotipo |  |
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SMPS-IC with MOSFET Driver Output
TDA 4916 GG
Features
• High clock frequency
• Low current drain
• High reference accuracy
• All monitoring functions
P-DSO-24-1
Type
TDA 4916 GG
Ordering Code
Q67000-A9230
Package
P-DSO-24-1
Functional Description and Application
The general-purpose single-ended switch-mode power supply device for the direct
control of SIPMOS power transistors incorporates both digital and analog functions.
These are required for the construction of high-quality flyback, forward and choke
converters. The device can be likewise used for transformer-less voltage multipliers and
variable-speed motors.
Faults occurring during operation of the switch-mode power supply are detected by
comparators integrated in the device which initiate protective functions.
In addition, pairs of power supplies can be synchronized in antiphase. In-phase or
antiphase synchronization is possible when more than two power supplies are involved.
Semiconductor Group
1
05.96
1 page  
TDA 4916 GG
Circuit Description
The individual functional sections of the device and their interactions are described
below.
Power Supply at VS
The device does not enable the output until the turn-ON threshold of VS is exceeded. The
duty factor (active time/period) can then rise from zero to the value set with K1 in the time
determined by the soft start. The turn-OFF threshold lies below the turn-ON threshold.
Below the turn-OFF threshold the output Q SIP is reliably low.
Frequency Generator
The frequency is mainly determined by close-tolerance external components and the
calibrated reference voltage.
The switching frequency at the output can be set by suitable choice of Rt and Ct.
The maximum possible duty factor can be reduced by a defined amount by means of a
resistor from CT to 0V GND. The maximum possible duty factor can be increased by a
defined amount by means of a resistor from CT to VS.
Ramp Generator
The ramp generator is controlled by the frequency generator and operates with the same
frequency. Capacitor Cr on the ramp generator is discharged by an internally-set current
and charged via a current set externally. The duration of the falling edge of the ramp
generator output must be shorter than its rise time. Only then do the upper and lower
switching levels of the ramp generator signal have their nominal values.
In “voltage mode control” operation, the rising edge of the ramp generator signal is
compared with an externally set dc voltage in comparator K1 for pulse-width control at
the output. The slope of the rising edge is set by the current through Rr. The voltage
source connected to Rr can be the SMPS input voltage. This makes it possible to control
the duty factor for a constant volt-second product at the output. This control option
(precontrol) permits equalization of known disturbances (e.g. input voltage ripple).
Superimposed load current control (current mode control) can also be implemented. For
this purpose the actual current at the source of the SIPMOS transistor is sensed and
compared with the specified value in comparator K5.
Semiconductor Group
5
05.96
5 Page 
TDA 4916 GG
Operating Range
Function
Supply voltage
Frequency generator
Ramp generator
Ambient temperature
Ground Q SIP
Resistor at RT
Symbol
VS
VVS QSIP
f
f
TA
V0V QSIP
RRT
Limit Values
min.
max.
0 15
0 15
0.05
400
0.05
400
– 40
+ 100
GND – 300 mV GND + 2 V
27 1000
Unit
V
V
kHz
kHz
°C
V
kΩ
Characteristics
VSon < VS < 15 V, – 25 °C < TA < 85 °C; VSon means that VS has exceeded VSH, but has
not gone below VSL.
Parameter
Symbol
Limit Values
Unit Test Condition
min. typ. max.
Current in VS
IVS
7 mA1) FG at 100 kHz
8 mA1) FG at 300 kHz
Q SYN
unconnected
8 mA1) FG at 100 kHz
9 mA1) FG at 300 kHz
Q SYN to 0V GND
Current in VS QSIP IVS QSIP 2.5 mA1) FG at 100 kHz
5.5 mA1) FG at 300 kHz
Current in
VS + VS QSIP
ISum
9 mA1) FG at 100 kHz
13 mA1) FG at 300 kHz
Q SYN
unconnected
10 mA1) FG at 100 kHz
14 mA1) FG at 300 kHz
Q SYN to 0 V GND
Semiconductor Group
11
05.96
11 Page | ||
| Páginas | Total 27 Páginas | |
| PDF Descargar | [ Datasheet TDA4916GG.PDF ] | |
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