TCLT1008 Datasheet PDF - Vishay Siliconix
| Part Number | TCLT1008 | |
| Description | Optocoupler with Phototransistor Output | |
| Manufacturers | Vishay Siliconix | |
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TCLT10.. Series
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The TCLT10.. Series consists of a phototransistor
optically coupled to a gallium arsenide infrared-
emitting diode in a 4-lead SO6L package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II (reinforced
isolation):
D For appl. class I – IV at mains voltage ≤ 300 V
D For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according to
the following equipment standards:
D VDE 0884
Optocoupler for electrical safety requirements
(will be replaced by IEC 747–5–1.2.3)
D IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 VRMS)
D VDE 0804
Telecommunication apparatus and data
processing
D IEC 65
Safety for mains-operated electronic and related
household apparatus
15231
43
12
C
Document Number 83515
Rev. A3, 19–Mar–01
www.vishay.com
1 (12)
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TCLT10.. Series
Vishay Telefunken
Maximum Safety Ratings (according to VDE 0884) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input (Emitter)
Parameters
Forward current
Output (Detector)
Test Conditions
Symbol
Isi
Value
130
Parameters
Power dissipation
Coupler
Test Conditions
Tamb ≤ 25°C
Symbol
Psi
Value
265
Parameters
Rated impulse voltage
Safety temperature
Test Conditions
Symbol
VIOTM
Tsi
Value
8
150
Unit
mA
Unit
mW
Unit
kV
°C
Insulation Rated Parameters (according to VDE 0884)
Parameter
Partial discharge test voltage –
Routine test
Partial discharge test voltage –
Lot test (sample test)
Insulation resistance
300
Test Conditions
100%, ttest = 1 s
Symbol
Vpd
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIO = 500 V
VIO = 500 V,
Tamb = 100°C
VIO = 500 V,
Tamb = 150°C
(construction test only)
VIOTM
Vpd
RIO
RIO
RIO
VIOTM
250 Phototransistor
Psi ( mW )
200
150
100
VPd
VIOWM
VIORM
Min. Typ. Max.
1.6
8
1.3
1012
1011
109
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
Unit
kV
kV
kV
W
W
W
50
0
0
94 9182
IR-Diode
Isi ( mA )
25 50 75 100 125 150
Tsi – Safety Temperature ( °C )
Figure 1. Derating diagram
0
13930
t1
tTr = 60 s
t3 ttest t4
t2 tstres
t
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
Document Number 83515
Rev. A3, 19–Mar–01
www.vishay.com
5 (12)
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for TCLT1008 electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ TCLT1008.PDF Datasheet ] | |
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