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PDF TC96C555MJA Data sheet ( Hoja de datos )

Número de pieza TC96C555MJA
Descripción 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR
Fabricantes TelCom Semiconductor 
Logotipo TelCom Semiconductor Logotipo



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1
TC96C55
3A OUTPUT PROGRAMMABLE POWER OSCILLATOR
FEATURES
s Controllable Duty Cycle
s Wide Operating Range ............................. 5V to 18V
s High Peak Output Current .................................. 3A
s High Capacitive Load Drive
Capability .................................... 1800pF in 20nsec
s Short Delay Time ............................. < 150nsec Typ
APPLICATIONS
s Fixed Frequency Power Oscillator
s Voltage Controlled Oscillator
s Low Power Buck Regulator Supply
s MOSFET Driver
s Simple diode inverters and doublers
ORDERING INFORMATION
Part No.
TC96C555COA
TC96C555CPA
TC96C555EOA
TC96C555EPA
TC96C555MJA
Package
Operating
Temp Range
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin CerDIP
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
GENERAL DESCRIPTION
The TC96C555 Power Oscillator is an easily pro-
grammed IC that can be used in simple switch-mode power
supplies, diode doublers and inverters, and similar circuits
where high-current pulses are needed in an economical
form.
The TC96C555 uses TelCom Semiconductors' new
Tough CMOS™ process. The output drive capability is
similar to the TC4423/4/5 MOSFET Drivers, which can
switch in 25nsec into a capacitive load of 1,800pF. The
TC96C555 will not latch up under any conditions within their
power and voltage ratings. They can accept, without dam-
age, up to 1.5A of reverse current (of either polarity) being
forced back into the output. All terminals are also fully
protected against up to 4kV of electrostatic discharge. The
peak output is rated at 3A. Split outputs permits driving of an
external pair of MOSFETS, with controllable cross conduc-
tion between upper and lower devices.
PIN CONFIGURATIONS (DIP and SOIC)
VR2 1
VIN 2
VREF
3
TC96C555CPA
TC96C555EPA
VR1 4
8 GND VR2 1
7 OUT
VIN 2
6 OUT VREF 3
5 VDD
VR1 4
8 GND
TC96C555COA
TC96C555EOA
7 OUT
6 OUT
5 VDD
2
3
4
5
FUNCTIONAL BLOCK DIAGRAM
3
VREF
4
VR1
3V
2
VIN
ISOURCE
2V
1V
1
VR2
3V
Q3
ISINK
+4V
VREF
1V 2V 3V
TELCOM SEMICONDUCTOR, INC.
VDD
8
Q1
7
OUTPUT A
OUTPUT B
6
Q2
6
7
GND
5
8
TC96C555-7 10/21/96
4-159

1 page




TC96C555MJA pdf
3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
TYPICAL CHARACTERISTICS (Cont.)
Delay Time vs. Supply Voltage
Temp = 125°C
250
TD1
200
TD2
150
100
50 VIN = 0 – 5V
CLOAD = 1000pF
0
4 6 8 10 12 14 16 18
Supply Voltage
Oscillation Frequency vs. Supply Voltage
Temp at 25°C, – 55°C, 125°C
11.9
125°C
11.7
11.5
25°C
11.3
11.1 -55°C
10.9
RDIS = 22K
10.7 RCHG = 44K
C = 1000pF
4 6 8 10 12 14 16 18
Supply Voltage
IDD vs. Supply Voltage
Temp = – 55°C, 25°C, 125°C
3000
2500
2000
1500
–55°C
1000
25°C
125°C
500
VIN = 0V
0
4 6 8 10 12 14 16 18
Supply Voltage
TELCOM SEMICONDUCTOR, INC.
1
TC96C555
Delay Time vs. Temperature
VDD = 18V
250
2
200
150
TD1
100 TD2
3
50 VIN = 0 – 5V
CLOAD = 1000pF
0
–55 –35 –15 5 25 45 65 85 105 125
Temperature (°C)
Oscillation Frequency vs. Temperature
VS = 5V, 10V, 18V
11.9
11.7
11.5
18V
15V
11.3
10V
11.1
10.9
10.7
VDIS = 22K
RCHG = 44K
C = 1000pF
–55 –35 –15 5 25 45 65 85 105 125
Temperature (°C)
IDD vs. Supply Voltage
Temp = – 55°C, 25°C, 125°C
3000
2500
4
5
6
2000
–55°C
1500
1000
25°C
125°C
500
VIN = 3V
0
4 6 8 10 12 14 16 18
Supply Voltage
7
8
4-163

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