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TC7S86FU fiches techniques PDF

Toshiba - EXCLUSIVE OR GATE

Numéro de référence TC7S86FU
Description EXCLUSIVE OR GATE
Fabricant Toshiba 
Logo Toshiba 





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TC7S86FU fiche technique
TC7S86F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7S86F, TC7S86FU
EXCLUSIVE OR Gate
Features
High Speed
: tpd = 10ns (Typ.) at VCC = 5 V
Low power dissipation
: ICC = 1 μA (Max) at Ta = 25°C
High noise immunity
: VNIH = VNIL = 28% VCC (Min)
Output drive capability
: 5 LSTTL Loads
Symmetrical Output Impedance : |IOH| = IOL= 2mA (Min)
Balanced propagation delays : tpLH tpHL
Wide operating voltage range : VCC = 2 to 6 V
Marking
E8
Product name
TC7S86F
TC7S86FU
(SMV)
(USV)
Absolute Maximum Ratings (Ta = 25°C)
Weight
SSOP5-P-0.95
SSOP5-P-0.65A
: 0.016 g (Typ.)
: 0.006 g (Typ.)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
Lead temperature (10 s)
Symbol
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
TL
Rating
0.5 to 7.0
0.5 to VCC + 0.5
0.5 to VCC + 0.5
±20
±20
±12.5
±25
200
65 to 150
260
Unit Pin Assignment (top view)
V
V
V IN B 1
5 VCC
mA
mA IN A 2
mA
mA GND 3
4 OUT Y
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-08-05

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