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NEC - MOS Field Effect Transistor

Numéro de référence 2K2139
Description MOS Field Effect Transistor
Fabricant NEC 
Logo NEC 





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2K2139 fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2139
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2139 is N-Channel Power MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
Low On-Resistance
RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A)
Low Ciss Ciss = 930 pF TYP.
High Avalanche Capability Ratings
Isolate TO-220 (MP-45F) Package
PACKAGE DIMENSIONS
(in millimeters)
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 600 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±5.0
A
Drain Current (pulse)*
ID(pulse) ±20
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
35 W
Total Power Dissipation (TA = 25 ˚C)
PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 5.0 A
Single Avalanche Energy**
EAS 8.3 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
123
2.5±0.1
0.65±0.1
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
Document No. TC-2512
(O. D. No. TC-8071)
Date Published January 1995 P
Printed in Japan
© 1995

PagesPages 8
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