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PDF ZXT11N20DF Data sheet ( Hoja de datos )
| Número de pieza | ZXT11N20DF | |
| Descripción | 20V NPN SILICON LOW SATURATION TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZXT11N20DF (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SuperSOT4™
20V NPN SILICON LOW SATURATION TRANSISTOR
ZXT11N20DF
SUMMARY
VCEO=20V; RSAT = 40m ; IC= 2.5A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
• Extremely Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• hFE characterised up to 5A
• IC=2.5A Continuous Collector Current
• SOT23 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
ZXT11N20DFTA
7 8mm embossed
ZXT11N20DFTC
13 8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
2N0
SOT23
E
C
B
Top View
ISSUE 1 - DECEMBER 1999
1
1 page  
TYPICAL CHARACTERISTICS
ZXT11N20DF
0.25
0.20
IC/IB=50
0.15
100°C
100m
Tamb=25°C
IC/IB=100
0.10
0.05
0.00
1m
25°C
-55°C
10m
100m
1
IC Collector Current (A)
VCE(SAT) v IC
10
10m
IC/IB=50
1m
1m
IC/IB=10
10m
100m
1
IC Collector Current (A)
VCE(SAT) v IC
10
1.2
100°C
1.0
0.8 25°C
VCE=2V
0.6
0.4 -55°C
0.2
0.0
1m
10m
100m
1
IC Collector Current (A)
hFE v IC
10
1.0 IC/IB=50
-55°C
0.8
25°C
0.6
100°C
0.4
1m
10m
100m
1
IC Collector Current (A)
VBE(SAT) v IC
10
1.0 VCE=2V
-55°C
0.8
25°C
0.6
100°C
0.4
1m
10m
100m
1
IC Collector Current (A)
VBE(ON) v IC
10
ISSUE 1 - DECEMBER 1999
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ZXT11N20DF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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