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ZXT10P12DE6 fiches techniques PDF

Zetex Semiconductors - 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Numéro de référence ZXT10P12DE6
Description 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
Fabricant Zetex Semiconductors 
Logo Zetex Semiconductors 





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ZXT10P12DE6 fiche technique
ZXT10P12DE6
SuperSOT™
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
VCEO=-12V; RSAT = 65m ; IC= -3A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage
hFE characterised up to 10A
IC=3A Continuous Collector Current
SOT23-6 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
ZXT10P12DE6TA
7 8mm embossed
ZXT10P12DE6TC
13 8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
717
SOT23-6
C
C
B
Top View
C
C
E
ISSUE 1 - SEPTEMBER 2000
1

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