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PDF ZXMP3A16DN8 Data sheet ( Hoja de datos )
| Número de pieza | ZXMP3A16DN8 | |
| Descripción | DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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ZXMP3A16DN8
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor Drive
• LCD backlighting
SO8
ORDERING INFORMATION
DEVICE
REEL TAPE
WIDTH
ZXMP3A16DN8TA 7’‘ 12mm
ZXMP3A16DN8TC 13’‘ 12mm
QUANTITY
PER REEL
500 units
2500 units
DEVICE MARKING
ZXMP
3A16
PINOUT
Top view
PROVISIONAL ISSUE C - JULY 2004
1
1 page  
TYPICAL CHARACTERISTICS
ZXMP3A16DN8
T = 25°C
10
1
0.1
10V 4V
3.5V
3V
2.5V
2V
-V
GS
1.5V
0.01 0.1 1 10
-V Drain-Source Voltage (V)
DS
Output Characteristics
10
T = 150°C
1
T = 25°C
-V = 10V
DS
0.11 2 3
-VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
100 1.5V
T = 25°C
-V
GS
2V
10
2.5V
3V
1 3.5V
4V
0.1
10V
0.001.01
0.1
1
10
-I Drain Current (A)
D
On-Resistance v Drain Current
T = 150°C
10
1
0.1
10V 4V 3.5V
3V
2.5V
2V
1.5V
-V
GS
0.01 0.1 1 10
-V Drain-Source Voltage (V)
DS
Output Characteristics
1.6
V = -10V
1.4
GS
I = -4.2A
D
1.2
R
DS(on)
1.0
V
0.8 GS(th)
V =V
0.6
GS DS
I = -250uA
D
0.4-50
0
50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
100
T = 150°C
10
1 T = 25°C
0.1
0.010.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE C - JULY 2004
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ZXMP3A16DN8.PDF ] | |
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