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PDF ZXM61N03F Data sheet ( Hoja de datos )
| Número de pieza | ZXM61N03F | |
| Descripción | 30V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61N03F
SUMMARY
V(BR)DSS=30V; RDS(ON)=0.22⍀; ID=1.4A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZXM61N03FTA
7
8mm embossed
3000 units
ZXM61N03FTC
13
8mm embossed
10000 units
DEVICE MARKING
• N03
SOT23
Top View
PROVISIONAL ISSUE A - MAY 1999
65
1 page  
ZXM61N03F
TYPICAL CHARACTERISTICS
10 +25°C
1
100m
10m
VGS
9V
5V
4V
3.5V
3V
2.5V
10 +150°C
1
100m
10m
1m
VGS
5V
4V
3V
2.5V
2.0V
1m
0.1
1
VDS - Drain-Source Voltage (V)
Output Characteristics
10
100u
0.01
0.1 1 10
VDS - Drain-Source Voltage (V)
Ouput Characteristics
100
10
VDS=10V
1
0.1 T=150°C
T=25°C
0.01
1.5 2.5
3.5
VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
10
1
VGS=4.5V
VGS=10V
0.1
0.1
1 10
ID - Drain Current (A)
100
On-Resistance v Drain Current
2.0
RDS(on)
1.5
VGS=10V
ID=0.91A
1.0
VGS=VDS
ID=250uA
0.5
VGS(th)
0
-100 -50
0
50 100 150
Tj - Junction Temperature (°C)
200
Normalised RDS(on) and VGS(th)
v Temperature
100
10
1
100m
10m
1m
T=150°C
T=25°C
100µ
0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - MAY 1999
69
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ZXM61N03F.PDF ] | |
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