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Zetex Semiconductors - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Numéro de référence ZVN3310F
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Fabricant Zetex Semiconductors 
Logo Zetex Semiconductors 





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ZVN3310F fiche technique
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995 7
FEATURES
* 100 Volt VDS
* RDS(on)= 10
ZVN3310F
S
D
COMPLEMENTARY TYPE - ZVP3310F
PARTMARKING DETAIL - MF
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
SOT23
VALUE
100
100
2
± 20
330
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
100
V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) 0.8 2.4 V
ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
IGSS
IDSS
20
1
50
On-State Drain Current(1)
ID(on)
500
Static Drain-Source On-State RDS(on)
Resistance (1)
10
nA VGS=± 20V, VDS=0V
µA VDS=100V, VGS=0
µA VDS=80V, VGS=0V, T=125°C(2)
mA VDS=25V, VGS=10V
VGS=10V, ID=500mA
Forward Transconductance
(1)(2)
gfs
100
mS VDS=25V, ID=500mA
Input Capacitance (2)
Common Source
Output Capacitance (2)
Ciss
Coss
40 pF
15 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
5 pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
3 typ
5 typ
4 typ
5 typ
5
7
6
7
ns
ns VDD 25V, ID=500mA
ns
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50source impedance and <5ns rise time on a pulse generator
3 - 396

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