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Numéro de référence | ZVN0117TA | ||
Description | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | ||
Fabricant | ETC | ||
Logo | |||
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 APRIL 94
FEATURES
* 170 Volt BVDS
APPLICATIONS
* Telephone handsets
ZVN0117TA
DG
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
170
160
2
± 20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
170
V ID=10µA, VGS=0V
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
100 nA VGS=± 15V, VDS=0V
10 µA VDS=170 V, VGS=0
50 µA VDS=140 V, VGS=0V,
T=50°C(2)
On-State Drain Current(1)
Static Drain-Source
On-State Resistance (1)
ID(on)
RDS(on)
100
23
23
mA VDS=3V, VGS=3.3V
Ω VGS=3.3V,ID=100mA
Ω VGS=3V,ID=30mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
PAGE NO
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Pages | Pages 1 | ||
Télécharger | [ ZVN0117TA ] |
No | Description détaillée | Fabricant |
ZVN0117TA | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | ETC |
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