DataSheetWiki


ZVN0117TA fiches techniques PDF

ETC - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Numéro de référence ZVN0117TA
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Fabricant ETC 
Logo ETC 





1 Page

No Preview Available !





ZVN0117TA fiche technique
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – APRIL 94
FEATURES
* 170 Volt BVDS
APPLICATIONS
* Telephone handsets
ZVN0117TA
DG
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
170
160
2
± 20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
170
V ID=10µA, VGS=0V
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
100 nA VGS=± 15V, VDS=0V
10 µA VDS=170 V, VGS=0
50 µA VDS=140 V, VGS=0V,
T=50°C(2)
On-State Drain Current(1)
Static Drain-Source
On-State Resistance (1)
ID(on)
RDS(on)
100
23
23
mA VDS=3V, VGS=3.3V
VGS=3.3V,ID=100mA
VGS=3V,ID=30mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%
PAGE NO

PagesPages 1
Télécharger [ ZVN0117TA ]


Fiche technique recommandé

No Description détaillée Fabricant
ZVN0117TA N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ETC
ETC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche