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PDF ZUMT817-25 Data sheet ( Hoja de datos )
| Número de pieza | ZUMT817-25 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |
| Fabricantes | Zetex Semiconductors | |
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SOT323 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – FEBRUARY 1999
PARTMARKING DETAILS ZUMT817-25 - T7
ZUMT817-40 - T23
COMPLEMENTARY TYPES
ZUMT817-25 - ZUMT807-25
ZUMT817-40 - ZUMT807-40– T7
ZUMT817-25
ZUMT817-40
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
IBM
Ptot
Tj:Tstg
VALUE
50
45
5
1
500
100
200
330
-55 to +150
UNIT
V
V
V
A
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
0.1 A VCB=20V, IE=0
5 A VCB=20V, IE=0, Tamb=150°C
10 A VEB=5V, IC=0
700 mV IC=500mA, IB=50mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1.2 V
IC=500mA, VCE=1V*
Static Forward
Current Transfer Ratio
-25
-40
Transition
Frequency
hFE
fT
100 600 IC=100mA, VCE=1V*
40 IC=500mA, VCE=1V*
160 400 IC=100mA, VCE=1V*
250 600 IC=100mA, VCE=1V*
200 MHz IC=10mA, VCE=5V
f=35MHz
Collector-base
Capacitance
Cobo
5.0 pF IE=Ie=0, VCB=10V
f=1MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
1 page | ||
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| PDF Descargar | [ Datasheet ZUMT817-25.PDF ] | |
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