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PDF ZTX958 Data sheet ( Hoja de datos )
| Número de pieza | ZTX958 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZTX958 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 3 JUNE 94
FEATURES
* 0.5 Amp continuous current
* Up to 1.5 Amps peak current
* Very low saturation voltage
* Excellent gain characteristics up to 1 Amp
* Spice model available
ZTX958
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-400 V
Collector-Emitter Voltage
VCEO
-400 V
Emitter-Base Voltage
VEBO
-6 V
Peak Pulse Current
ICM -1.5 A
Continuous Collector Current
IC -0.5 A
Practical Power Dissipation*
Ptotp
1.58 W
Power Dissipation at Tamb=25°C Ptot 1.2 W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -400 -600
V IC=-100µA
Collector-Emitter Breakdown V(BR)CER
Voltag
-400 -600
V IC=-1µA, RB ≤1KΩ
Collector-Emitter Breakdown V(BR)CEO
Voltage
-400 -550
V IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO -6
-8
V IE=-100µA
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
ICER
R ≤1KΩ
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-50 nA
-1 µA
-50 nA
-1 µA
-10 nA
-100 -150 mV
-150 -200 mV
-300 -400 mV
-790 -900 mV
VCB=-300V
VCB=-300V, Tamb=100°C
VCB=-300V
VCB=-300V, Tamb=100°C
VEB=-6V
IC=-10mA, IB=-1mA*
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-100mA*
IC=-500mA, IB=-100mA*
3-330
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZTX958.PDF ] | |
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