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PDF ZTX869 Data sheet ( Hoja de datos )
| Número de pieza | ZTX869 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZTX869 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ZTX869
ISSUE 1 APRIL 94
FEATURES
* 25 Volt VCEO
* 5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* High Gain
* Ptot=1.2 Watts
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
60 V
Collector-Emitter Voltage
VCEO
25 V
Emitter-Base Voltage
VEBO
6V
Peak Pulse Current
ICM 20 A
Continuous Collector Current IC 5 A
Practical Power Dissipation*
Ptotp
1.58 W
Power Dissipation at Tamb=25°C Ptot 1.2 W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 60
120
V IC=100µA
Collector-Emitter Breakdown V(BR)CER
Voltag
60
120
V IC=1µA, RB ≤1KΩ
Collector-Emitter Breakdown V(BR)CEO
Voltage
25
35
V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
6
8
V IE=100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
ICBO
ICER
R ≤1KΩ
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
50 nA VCB=50V
1 µA VCB=50V, Tamb=100°C
50 nA VCB=50V
1 µA VCB=50V, Tamb=100°C
10 nA VEB=6V
25 50 mV IC=0.5A, IB=10mA*
50 80 mV IC=1A, IB=10mA*
100 200 mV IC=2A, IB=100mA*
180 220 mV IC=5A, IB=100mA*
880 950 mV IC=5A, IB=100mA*
3-306
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZTX869.PDF ] | |
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