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ZTX857 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Zetex Semiconductors - NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

شماره قطعه ZTX857
شرح مفصل NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
تولید کننده Zetex Semiconductors 
آرم Zetex Semiconductors 


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ZTX857 شرح
NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 1 – APRIL 94
FEATURES
* 300 Volt VCEO
* 3 Amps continuous current
* Up to 5 Amps peak current
* Very low saturation voltage
* Ptot= 1.2 Watt
ZTX857
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
330 V
Collector-Emitter Voltage
VCEO
300 V
Emitter-Base Voltage
VEBO
6V
Peak Pulse Current
ICM 5 A
Continuous Collector Current IC 3 A
Practical Power Dissipation*
Ptotp
1.58 W
Power Dissipation at Tamb=25°C Ptot 1.2 W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 330 475
V IC=100µA
Collector-Emitter Breakdown V(BR)CER 330 475
Voltag
V IC=1µA, RB 1K
Collector-Emitter Breakdown V(BR)CEO 300 350
Voltage
V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
6
8
V IE=100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
ICBO
ICER
R 1K
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
50 nA VCB=300V
1 µA VCB=300V, Tamb=100°C
50 nA VCB=300V
1 µA VCB=300V, Tamb=100°C
10 nA VEB=6V
50 100 mV IC=0.5A, IB=50mA*
80 140 mV IC=1A, IB=100mA*
140 200 mV IC=2A, IB=200mA*
170 250 mV IC=3A, IB=600mA*
870 1000 mV IC=2A, IB=200mA*
3-303

قانون اساسیصفحه 3
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