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ZTX792A Datasheet دیتاشیت PDF دانلود

دیتاشیت - Zetex Semiconductors - PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

شماره قطعه ZTX792A
شرح مفصل PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
تولید کننده Zetex Semiconductors 
آرم Zetex Semiconductors 


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ZTX792A شرح
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 – APRIL 94
FEATURES
* 70 Volt VCEO
* Gain of 400 at IC=3 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Flash gun convertors
* Battery powered circuits
* Motor drivers
ZTX792A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
derate above 25°C
VCBO
VCEO
VEBO
ICM
IC
Ptotp
Ptot
-75 V
-70 V
-5 V
-4 A
-2 A
1.5 W
1W
5.7 mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -75
V IC=-100µA
Collector-Emitter Breakdown V(BR)CEO
Voltage
-70
V IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO -5
V IE=-100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
ICBO
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-0.1
-0.1
-0.45
-0.5
-0.5
-0.95
µA
µA
V
V
V
V
VCB=-40V
VEB=-4V
IC=-500mA, IB=-5mA*
IC=-1A, IB=-25mA*
IC=-2A, IB=-200mA*
IC=-1A, IB=-25mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.75
V IC=-1A, VCE=-2V*
Static Forward Current
hFE 300
800
IC=-10mA, VCE=-2V*
Transfer
250 IC=-500mA, VCE=-2V*
200 IC=-1A, VCE=-2V*
3-282

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