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PDF ZTX696B Data sheet ( Hoja de datos )
| Número de pieza | ZTX696B | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* 180 Volt VCEO
* Gain of 500 at IC=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers
* Relay / solenoid drivers
ABSOLUTE MAXIMUM RATINGS.
ZTX696B
C
B
E
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation *
Power Dissipation at Tamb=25°C
derate above 25°C
VCBO
VCEO
VEBO
ICM
IC
Ptotp
Ptot
180 V
180 V
5V
1A
0.5 A
1.5 W
1W
5.7 mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 180
V IC=100µA
Collector-Emitter Breakdown V(BR)CEO
Voltage
180
V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
5
V IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
ICBO
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
0.1 µA
0.1 µA
0.2 V
0.2 V
0.25 V
0.9 V
VCB=145V
VEB=4V
IC=50mA, IB=0.5mA*
IC=100mA, IB=2mA*
IC=200mA, IB=5mA*
IC=200mA, IB=5mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9 V
IC=200mA, VCE=5V*
Static Forward Current
Transfer Ratio
hFE 500
150
IC=100mA, VCE=5V*
IC=200mA, VCE=5V*
3-247
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZTX696B.PDF ] | |
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