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PDF ZTX576 Data sheet ( Hoja de datos )
| Número de pieza | ZTX576 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZTX576 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 200 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
ZTX576
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
-200
-200
-5
-2
-1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -200
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -200
V IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V IE=-100µA
Collector Cut-Off
Current
ICBO
-0.1 µA
VCB=-160V
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.1 µA
-0.3 V
VEB=-4V
IC=-100mA, IB=-10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1 V
IC=-100mA, IB=-10mA*
Base-Emitter
Turn-on Voltage
VBE(on)
-1 V
IC=-100mA, VCE=-10V*
Static Forward Current hFE
Transfer Ratio
Transition
Frequency
fT
50
50
100
IC=-10mA, VCE=-10V*
300 IC=-300mA, VCE=-10V*
MHz IC=-50mA, VCE=-10V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-204
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ZTX576.PDF ] | |
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