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PDF ZTX552 Data sheet ( Hoja de datos )
| Número de pieza | ZTX552 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZTX552 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 100 Volt VCEO
* 1 Amp continuous current
* Ptot=1 Watt
ZTX552
ZTX553
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at Tamb=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
ZTX552 ZTX553
-100 -120
-80 -100
-5
-2
-1
1
5.7
-55 to +200
UNIT
V
V
V
A
A
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL ZTX552
ZTX553
UNIT
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO -100
-120
V
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
VCEO(sus) -80
-100 V
Emitter-Base
V(BR)EBO -5
-5
V
Breakdown Voltage
Collector Cut-Off
Current
ICBO
-0.1 µA
-0.1
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.1
-0.25
-0.1 µA
-0.25 V
Base-Emitter
VBE(sat)
-1.1
-1.1 V
Saturation Voltage
Base-Emitter
VBE(on)
-1.0
-1.0 V
Turn-onn Voltage
Static Forward Current hFE
Transfer Ratio
40 150 40 200
10 10
Transition Frequency fT
150
150
MHz
Output Capacitance Cobo
12 12 MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3-196
CONDITIONS.
IC=-100µA
IC=-10mA
IE=-100µA
VCB=-80V
VCB=-100V
VEB=-4V
IC=-150mA, IB=-15mA*
IC=-150mA, IB=-15mA*
IC=-150mA, VCE=-10V*
IC=-150mA, VCE=-10V*
IC=-1A, VCE=-10V*
IC=-50mA, VCE=-10V
f=100MHz
VCB=-10V, f=1MHz
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ZTX552.PDF ] | |
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