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Numéro de référence | ZTX551 | ||
Description | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | ||
Fabricant | Zetex Semiconductors | ||
Logo | |||
1 Page
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
ZTX550
ZTX551
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at Tamb=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
ZTX550 ZTX551
-60 -80
-45 -60
-5
-2
-1
1
5.7
-55 to +200
UNIT
V
V
V
A
A
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
ZTX550
ZTX551
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO -60
Breakdown Voltage
-80
Collector-Emitter
VCEO(sus) -45
Sustaining Voltage
-60
Emitter-Base
V(BR)EBO -5
Breakdown Voltage
-5
Collector Cut-Off
Current
ICBO
-0.1
-0.1
Emitter Cut-Off
Current
IEBO
-0.1 -0.1
Collector-Emitter
VCE(sat)
Saturation Voltage
-0.25
-0.35
UNIT
V
V
V
µA
µA
µA
V
CONDITIONS.
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-45V
VCB=-60V
VEB=-4V
IC=-150mA,
IB=-15mA*
Base-Emitter
VBE(sat)
Saturation Voltage
-1.1
-1.1 V
IC=-150mA,
IB=-15mA*
Static Forward
Current Transfer
Ratio
hFE
100 300 50
15 10
150
IC=-150mA,
VCE=-10V*
IC=-1A, VCE=-10V*
Transition
Frequency
fT 150 150 MHz IC=-50mA, VCE=-10V
f=100MHz
3-194
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Pages | Pages 2 | ||
Télécharger | [ ZTX551 ] |
No | Description détaillée | Fabricant |
ZTX550 | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | Zetex Semiconductors |
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ZTX551 | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | Zetex Semiconductors |
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